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FDG6332C
+StücklisteMOSFET N/P-CH 20V SC70-6
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HerstellerOnsemi
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Herstellerteil #FDG6332C
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Paket TSSOP-6
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Auf Lager2173
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 700mA, 600mA |
| RdsOn(Max)@IdVgs | 300mOhm @ 700mA, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.5nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 113pF @ 10V |
| Power-Max | 300mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Übersicht
Description
An "Introduction to FDG6332C" would typically provide foundational knowledge and skills pertaining to the subject matter of the course. The course might explore key concepts, methodologies, and practical applications relevant to the field, aiming to equip students with a solid understanding of the basics. Students might engage in lectures, discussions, and hands-on activities to reinforce learning. The course could also include assessments to evaluate understanding and mastery of the topics covered.
If FDG6332C pertains to a specific field, such as finance or engineering, the introduction would focus on essential theories, tools, and practices in that area. For detailed information, it's best to consult the course syllabus or contact the educational institution offering the course.
Equivalent
1. Vishay Si4936ADY
2. ON Semiconductor NTR4003N/P
3. Diodes Incorporated DMN3027L/N
These alternatives should be checked for specific parameter matches like voltage, current ratings, and package type to ensure compatibility with your application.
Features
1. Dual N-Channel Configuration: Offers two N-channel MOSFETs in a single package, optimizing space and simplifying circuit designs.
2. Low On-Resistance: Provides low R_DS(on) values, enhancing efficiency by reducing power losses during operation.
3. High-Speed Switching: Supports fast switching speeds, making it suitable for applications requiring quick response times.
4. Small Package: Typically available in compact packages, such as the SuperSOT-6 package, allowing for efficient use of PCB space.
5. Low Gate Charge: Features low gate charge, which reduces the drive power requirements and enhances overall system performance.
6. Thermal Performance: Designed to handle significant power levels with adequate heat dissipation capabilities.
7. Broad Application Range: Suitable for use in DC-DC converters, power management systems, load switches, and other electronic devices requiring efficient power control.
These features make the FDG6332C a versatile component for various power management applications.
Pinout
1. Pin 1 (G1): Gate of the first MOSFET.
2. Pin 2 (S1): Source of the first MOSFET.
3. Pin 3 (S2): Source of the second MOSFET.
4. Pin 4 (G2): Gate of the second MOSFET.
5. Pin 5 (D2): Drain of the second MOSFET.
6. Pin 6 (D1): Drain of the first MOSFET.
The dual MOSFET structure allows for efficient power management, making the FDG6332C suitable for use in various switching applications, including DC-DC converters, load switches, and other power management roles where space is at a premium.