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FDG6332C-F085
+StücklisteMOSFET N/P-CH 20V 0.7A SC88
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HerstellerOnsemi
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Herstellerteil #FDG6332C-F085
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Datenblatt FDG6332C-F085 DataSheet
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Auf Lager8136
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 700mA, 600mA |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 700mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 113pF @ 10V |
| Power - Max | 300mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88 (SC-70-6) |
| Base Product Number | FDG6332 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
Übersicht
Description
Understanding the properties and potential applications of FDG6332C-F085 requires knowledge of its chemical behavior, stability, reactivity, and compatibility with other compounds. Researchers and industries might explore this compound for purposes such as drug development, advanced materials fabrication, or as an industrial intermediary.
For precise applications, safety protocols, and handling instructions, consulting relevant scientific literature or safety data sheets is essential. Further exploration into its synthesis, characterization, and practical uses will enhance comprehension and facilitate practical applications in various fields.
Equivalent
1. BSS138 - Suitable for low power applications.
2. IRF3205 - Higher current capacity.
3. AO3400 - Commonly used in portable devices.
4. 2N7000 - Standard N-channel MOSFET for general use.
Always verify specifications such as voltage, current, and packaging to ensure compatibility.
Features
1. Advanced Technology: Utilizes cutting-edge semiconductor technology for enhanced performance.
2. High Efficiency: Designed for low power consumption, ensuring optimal energy use.
3. Robust Build: Features a durable construction for longevity and resilience in demanding environments.
4. Versatile Applications: Suitable for a wide range of uses, including industrial automation, consumer electronics, and automotive systems.
5. User-Friendly Interface: Easy to integrate and operate, allowing for seamless user experience.
6. Compact Design: Space-saving format without compromising on functionality.
Overall, the FDG6332C-F085 combines excellent performance with practical features, making it an ideal choice for professionals seeking reliable solutions.
Pinout
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first MOSFET.
3. Drain 1 (D1): Drain terminal for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second MOSFET.
6. Drain 2 (D2): Drain terminal for the second MOSFET.
7. Common Source (CS): Common source connection for both devices.
8. N/C (Not Connected): No internal connection.
This configuration allows for efficient switching in various electronic applications, providing low on-resistance and high-speed switching capabilities.