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FDMS4D0N12C
+StücklisteMOSFET N-CH 120V 18.5A/114A 8QFN
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HerstellerOnsemi
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Herstellerteil #FDMS4D0N12C
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Paket PQFN-8
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Auf Lager2531
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120 V |
| Current - Continuous Drain(Id) @ 25°C | 18.5A (Ta), 114A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 4mOhm @ 67A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 370A |
| Gate Charge(Qg)(Max) @ Vgs | 82 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 6460 pF @ 60 V |
| Power Dissipation (Max) | 2.7W (Ta), 106W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
Übersicht
Description
Equivalent
1. Infineon BSC026N12NS - 120V, 40A N-channel MOSFET.
2. Vishay SiR182DP - 120V, 40A N-channel MOSFET.
3. STMicroelectronics STL120N10F7 - 100V, 40A N-channel MOSFET.
Ensure to verify the exact specifications and package type to confirm suitability for your application.
Features
1. Low On-Resistance: It offers low R_DS(on), which minimizes power loss and improves efficiency.
2. Fast Switching Speed: The MOSFET supports rapid switching, enhancing performance in high-frequency applications.
3. High Power Density: Compact design allows for efficient power management in space-constrained environments.
4. Thermal Performance: Optimized for excellent thermal performance, helping manage heat dissipation effectively.
5. Robust Design: Includes features to withstand voltage spikes and other electrical stresses.
6. Enhanced Safe Operating Area (SOA): Ensures reliable operation across a range of conditions.
7. Lead-Free Package: Environmentally friendly, compliant with global standards.
These features make the FDMS4D0N12C suitable for applications in power management, DC-DC converters, and motor drives, where efficiency and reliability are critical.
Pinout
The specific pin configuration for an 8-pin MOSFET like the FDMS4D0N12C generally includes:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The channel through which current flows when the MOSFET is on.
3. Source (S): The terminal through which current enters the MOSFET.
Typically, in a standard pin configuration, multiple pins are paralleled to each of these terminals to enhance current carrying capability, but the exact pin distribution should be verified from the datasheet for precise design applications.
Manufacturer
Application
1. Switching Regulators: Used in DC-DC converters to regulate voltage efficiently.
2. Motor Drives: Controls the power supply to motors in industrial and automotive systems.
3. Power Supply Units (PSUs): Used in computer and consumer electronics for converting electrical power.
4. Battery Management Systems: Manages battery charging and discharging in portable electronics.
5. Telecommunications Equipment: Facilitates power management in network infrastructure.
6. Inverters: Used in solar power systems for converting DC to AC power.
Its low on-resistance and fast switching capabilities make it suitable for these applications.