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FDMS6681Z
+StücklisteMOSFET P-CH 30V 21.1A/49A 8PQFN
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HerstellerOnsemi
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Herstellerteil #FDMS6681Z
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Auf Lager1395
365 Tage Qualitätsgarantie
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Spezifikationen
| Attribut | Wert |
| Series | PowerTrench® |
| Part Status | Obsolete |
| Base Product Number | FDMS6681 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 21.1A (Ta), 49A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.2mOhm @ 22.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 241 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 10380 pF @ 15 V |
| Power Dissipation (Max) | 2.5W (Ta), 73W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package | 8-PowerTDFN |
| Packaging | Tape & Reel (TR) |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of about 13.5A, depending on the package and temperature conditions. The device is typically offered in a compact, thermally efficient package, such as the SO-8, which is conducive to high-density circuit board designs.
Overall, the FDMS6681Z provides a balance of low conduction and switching losses, making it a cost-effective solution for engineers designing power-efficient systems in various electronics, including consumer, industrial, and automotive applications.
Equivalent
Features
1. N-Channel: It is an N-channel MOSFET, which typically offers high efficiency and fast switching speeds.
2. Low On-Resistance: The device features a low on-resistance, reducing power loss and improving efficiency in power management circuits.
3. Fast Switching: This MOSFET is designed for fast switching, making it suitable for high-frequency applications.
4. Thermal Performance: It provides good thermal performance, aiding in heat dissipation and ensuring reliable operation under varying conditions.
5. Small Package: The MOSFET comes in a compact package, saving space on the circuit board and allowing for more efficient designs in portable and space-constrained applications.
6. Robust Design: It includes overvoltage protection and is designed to withstand harsh operating environments.
These features make the FDMS6681Z suitable for use in a variety of applications like DC-DC converters, power supply circuits, and other power management systems.
Pinout
Here is a brief overview of its pin configuration and function:
1. Pin Count: 8 pins.
2. Key Functions:
- Drain (D): Connected to the load and is the main terminal through which current flows when the MOSFET is conducting.
- Source (S): Serves as the return path for the current flowing through the MOSFET.
- Gate (G): Used to control the MOSFET's operation. Applying a voltage here turns the MOSFET on or off.
- Body Diode: An intrinsic diode present in the MOSFET structure, which provides reverse polarity protection.
This MOSFET is commonly utilized in applications requiring efficient power management, such as DC-DC converters and switching regulators.
Manufacturer
Application
Package
Frequently Asked Questions
Q: What is the maximum drain-source voltage (Vdss) for the FDMS6681Z?
A: The maximum drain-source voltage (Vdss) is 30 V, making it suitable for low-voltage power management applications.
Q: What is the continuous drain current rating at 25°C case temperature?
A: At Tc=25°C, the continuous drain current (Id) is 49 A, while at Ta=25°C it is 21.1 A due to thermal constraints.
Q: What is the typical on-resistance (Rds(on)) for this P-Channel MOSFET?
A: The maximum Rds(on) is 3.2 mOhm at Vgs=10V and Id=22.1A, offering low conduction losses for high-efficiency designs.
Q: What is the maximum gate charge (Qg) specification?
A: The maximum total gate charge (Qg) is 241 nC at Vgs=10V, which impacts switching speed and gate drive requirements.
Q: What is the input capacitance (Ciss) value under typical operating conditions?
A: The maximum input capacitance (Ciss) is 10380 pF at Vds=15V, requiring careful gate drive design for fast switching.
Q: What is the recommended drive voltage range for achieving lowest Rds(on)?
A: The recommended drive voltages are 4.5V (minimum) and 10V (typical) to minimize on-resistance, with Vgs(max) rated at ±25V.
Q: Is this component RoHS compliant and what is its lifecycle status?
A: RoHS and lifecycle details are not provided in the specifications; contact manufacturer for compliance and availability updates.
