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FDN86246
+StücklisteMOSFET N-CH 150V 1.6A SUPERSOT3
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HerstellerOnsemi
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Herstellerteil #FDN86246
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Auf Lager2817
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain(Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 6V, 10V |
| Rds On(Max) @ Id Vgs | 261mOhm @ 1.6A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 5 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 225 pF @ 75 V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
Übersicht
Features
The FDN86246 is a dual N-channel MOSFET with the following key features:
- Low On-Resistance (RDS(on)): Typically 50mΩ at VGS = 4.5V, reducing power loss.
- High Current Handling: Supports up to 3.5A continuous drain current.
- Low Threshold Voltage (VGS(th)): 1V max, enabling efficient low-voltage operation.
- Fast Switching Speed: Optimized for high-frequency applications.
- Small Package (SOT-363): Space-saving, suitable for compact designs.
- Logic-Level Compatible: Fully enhanced at 2.5V gate drive.
- Low Power Consumption: Ideal for battery-powered devices.
Common applications include power management, load switching, and DC-DC converters. Its compact size and efficiency make it suitable for portable electronics.
- Low On-Resistance (RDS(on)): Typically 50mΩ at VGS = 4.5V, reducing power loss.
- High Current Handling: Supports up to 3.5A continuous drain current.
- Low Threshold Voltage (VGS(th)): 1V max, enabling efficient low-voltage operation.
- Fast Switching Speed: Optimized for high-frequency applications.
- Small Package (SOT-363): Space-saving, suitable for compact designs.
- Logic-Level Compatible: Fully enhanced at 2.5V gate drive.
- Low Power Consumption: Ideal for battery-powered devices.
Common applications include power management, load switching, and DC-DC converters. Its compact size and efficiency make it suitable for portable electronics.
Pinout
The FDN86246 is a Dual N-Channel MOSFET in a 6-pin SOT-363 package.
### Pin Functions:
1. Gate 1 (G1) – Controls the first MOSFET.
2. Source 1 (S1) – Source terminal for the first MOSFET.
3. Drain 1 (D1) – Drain terminal for the first MOSFET.
4. Gate 2 (G2) – Controls the second MOSFET.
5. Source 2 (S2) – Source terminal for the second MOSFET.
6. Drain 2 (D2) – Drain terminal for the second MOSFET.
### Key Features:
- Low On-Resistance (RDS(on)) for efficient switching.
- Compact SOT-363 package for space-constrained designs.
- Logic-level compatible for easy interfacing with microcontrollers.
Commonly used in power management, load switching, and DC-DC converters.
### Pin Functions:
1. Gate 1 (G1) – Controls the first MOSFET.
2. Source 1 (S1) – Source terminal for the first MOSFET.
3. Drain 1 (D1) – Drain terminal for the first MOSFET.
4. Gate 2 (G2) – Controls the second MOSFET.
5. Source 2 (S2) – Source terminal for the second MOSFET.
6. Drain 2 (D2) – Drain terminal for the second MOSFET.
### Key Features:
- Low On-Resistance (RDS(on)) for efficient switching.
- Compact SOT-363 package for space-constrained designs.
- Logic-level compatible for easy interfacing with microcontrollers.
Commonly used in power management, load switching, and DC-DC converters.
Package
The FDN86246 is a dual N-channel PowerTrench MOSFET from ON Semiconductor. It comes in a compact SO-8 (SOP-8) surface-mount package, suitable for high-efficiency power management applications. The package features a low-profile design with gull-wing leads for easy PCB assembly. Key specs include a 30V drain-source voltage and 6.3A continuous drain current. Ideal for portable electronics and power switching.
