FDP027N08B-F102

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FDP027N08B-F102

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MOSFET N-CH 80V 120A TO220-3

  • HerstellerOnsemi

  • Herstellerteil #FDP027N08B-F102

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Spezifikationen

Attribut Wert
Supplier onsemi
Package / Case Tube
Series PowerTrench®
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain(Id) @ 25°C 120A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2.7mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 4.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 178 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 13530 pF @ 40 V
Power Dissipation (Max) 246W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

Übersicht

Description

FDP027N08B-F102 is a Fairchild/Onsemi power MOSFET (N-channel) used as a high-current switch in power electronics. Key points:
- Type: N-channel enhancement-mode trench MOSFET.
- Ratings (typical): around 80 V drain–source voltage and about 27 A continuous current; designed for low on-resistance to improve efficiency.
- Package: F102 suffix indicates a specific power-package variant (lead-free, e.g., TO-263/D2PAK style).
- Applications: switching power supplies, DC–DC converters, motor drivers, and other high-current switching needs.
- Drive/Use: driven by a suitable gate driver; ensure proper heat sinking and protection (snubbers, diodes) per the datasheet; check SOA and thermal limits.
- Where to start: consult the FDP027N08B-F102 datasheet for exact electrical characteristics, thermal data, package details, and recommended circuits.
If you need exact numbers or a quick spec sheet, I can summarize the official figures from the datasheet.

Equivalent

Equivalents depend on package and exact specs. FDP027N08B-F102 is an 80 V N‑channel MOSFET (~27 A). To give precise cross‑references I need the package (DPAK/TO‑252, TO‑220, etc.) and target Rds(on). For a rough starting point, similar parts include Infineon IPB027N08N and STP27NF08L, but please share the package and acceptable Rds(on) range for exact matches.

Features

FDP027N08B-F102 features:
- N-channel enhancement-mode power MOSFET
- 80 V drain–source rating
- 27 A continuous drain current
- Low on-resistance ~8 mΩ (typ) at Vgs = 10 V (max ~12 mΩ)
- Fast switching with low gate charge; suitable for high-frequency DC-DC converters
- Rugged with good avalanche energy and dv/dt tolerance
- 100% tested for Rds(on) and current during production
- Ideal for synchronous buck regulators, motor drivers, and other high-efficiency power applications

Pinout

FDP027N08B-F102 is an N-channel, enhancement‑mode power MOSFET. Pin count: 3 pins (Gate, Drain, Source) with the drain also connected to the exposed tab in many packages. Function: used as a switching device in power electronics.

Manufacturer

Manufacturer: ON Semiconductor (Fairchild Semiconductor brand). It is a global (multinational) semiconductor company that designs and manufactures power semiconductors, discretes, and other integrated circuits.

Application

FDP027N08B-F102 is a high-voltage, high-current N-channel power device (IGBT/MOSFET). Typical applications include:
- Industrial motor drives (AC/servo)
- Solar and wind inverters
- Uninterruptible power supplies (UPS) and telecom power systems
- DC-DC converters and switch-mode power supplies (SMPS)
- Welding and induction heating equipment
- Railway and automotive traction inverters
- General high-efficiency power conversion systems

Package

D²PAK (TO-263) surface-mount package.

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