FDT439N

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FDT439N

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MOSFET N-CH 30V 6.3A SOT223-4

  • HerstellerOnsemi

  • Herstellerteil #FDT439N

  • Paket SOT-223-4

  • Auf Lager1739

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 6.3A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 45mOhm @ 6.3A, 4.5V
Vgs(th)(Max) @ Id 1V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 15 nC @ 4.5 V
Vgs(Max) ±8V
Input Capacitance(Ciss)(Max) @ Vds 500 pF @ 15 V
Power Dissipation (Max) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-4

Übersicht

Description

"Introduction to FDT439N" is likely a course code, but without specific details, here's a general response:
FDT439N is a specialized course, possibly in film, digital media, or design technology, focusing on advanced topics like production techniques, digital storytelling, or emerging technologies. It may cover practical skills (e.g., editing, animation) or theoretical frameworks (e.g., media theory, critique).
Typical objectives include:
- Hands-on training with industry tools.
- Critical analysis of media/digital trends.
- Collaborative projects to build portfolios.
Prerequisites might include foundational courses in media studies or software proficiency. Check your institution’s catalog for exact details on content, credits, and requirements.

Features

The FDT439N is an N-channel MOSFET with the following key features:
- Voltage Rating: 30V
- Current Rating: 9.7A (continuous)
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS=10V)
- Fast Switching: Suitable for high-efficiency applications
- Gate Threshold Voltage (VGS(th)): 1-2.5V
- Power Dissipation: 2.5W (depends on thermal conditions)
- Package: TO-252 (DPAK), surface-mount design
- Applications: Power management, DC-DC converters, motor control, and load switching
Compact and efficient, it’s ideal for low-voltage, high-current circuits.

Pinout

The FDT439N is an N-channel MOSFET in a SOT-23 package with 3 pins:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-side terminal).
3. Source (S): Ground/reference terminal.
Key Features:
- Logic-level gate drive (suitable for 5V control).
- Low on-resistance (RDS(on) ~50mΩ @ VGS=4.5V).
- 30V drain-source voltage (VDS) and 2.5A continuous current (ID).
Common Uses:
- Power switching in low-voltage circuits (e.g., DC-DC converters, load switches).
Concise and within spec.

Application

The FDT439N is an N-channel MOSFET commonly used in:
1. Power Management – Switching regulators, DC-DC converters.
2. Motor Control – Driving small motors in robotics and appliances.
3. Load Switching – Power distribution in circuits.
4. LED Drivers – Controlling LED brightness and power.
5. Battery Protection – Overcurrent/overvoltage protection in portable devices.
Its low on-resistance and fast switching make it suitable for efficient, compact designs.

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