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FQD2N60CTM
+StücklisteMOSFET N-CH 600V 1.9A DPAK
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HerstellerOnsemi
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Herstellerteil #FQD2N60CTM
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Auf Lager3397
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Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 600 V |
| Current-ContinuousDrain(Id)@25°C | 1.9A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.7Ohm @ 950mA, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 12 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 235 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta), 44W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
Übersicht
Description
The FQD2N60CTM is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It is part of Fairchild Semiconductor's range of power devices. This MOSFET features a maximum drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 2A, making it suitable for high-voltage applications where moderate current handling is required.
The FQD2N60CTM offers fast switching speeds, which enhances efficiency in power conversion and management applications. The device has a low on-resistance (R_DS(on)), minimizing power loss and heat generation during operation. This makes it a good choice for use in switching power supplies, motor control, and other applications requiring efficient power management.
Housed in a TO-252 package, it provides a compact form factor with good thermal performance. The FQD2N60CTM's design focuses on reliability and robustness, ensuring stable performance over a wide range of operating conditions. Its combination of high voltage capability and efficient operation makes it a versatile component in the design of electronic circuits.
The FQD2N60CTM offers fast switching speeds, which enhances efficiency in power conversion and management applications. The device has a low on-resistance (R_DS(on)), minimizing power loss and heat generation during operation. This makes it a good choice for use in switching power supplies, motor control, and other applications requiring efficient power management.
Housed in a TO-252 package, it provides a compact form factor with good thermal performance. The FQD2N60CTM's design focuses on reliability and robustness, ensuring stable performance over a wide range of operating conditions. Its combination of high voltage capability and efficient operation makes it a versatile component in the design of electronic circuits.
Equivalent
The FQD2N60CTM is a 600V, 2A N-channel MOSFET. Equivalent products would include similar specifications from other manufacturers, such as the IRF840 from Infineon, STP2NK60Z from STMicroelectronics, and the BSP296 from ON Semiconductor. These equivalents should be checked for compatibility regarding voltage, current ratings, and package type before substitution. Always verify the datasheet for exact features and performance metrics.
Features
The FQD2N60CTM is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Capacity: The device can handle a continuous drain current (I_D) of 2A.
3. R_DS(on): It offers a low on-resistance, which helps in reducing power losses and improving efficiency.
4. Package Type: The FQD2N60CTM is available in a TO-251 package, which is compact and suitable for space-constrained designs.
5. Temperature Range: The MOSFET operates effectively over a broad temperature range, ensuring reliability in various environmental conditions.
6. Applications: It is commonly used in switching power supplies, converters, motor drivers, and other power management applications.
7. Enhanced Performance: The device is designed to deliver fast switching speeds and robust performance, crucial for modern electronic circuits.
These features make the FQD2N60CTM a versatile choice for designers looking for a reliable high-voltage MOSFET solution.
1. Voltage Rating: It has a drain-source voltage (V_DS) of 600V, making it suitable for high-voltage applications.
2. Current Capacity: The device can handle a continuous drain current (I_D) of 2A.
3. R_DS(on): It offers a low on-resistance, which helps in reducing power losses and improving efficiency.
4. Package Type: The FQD2N60CTM is available in a TO-251 package, which is compact and suitable for space-constrained designs.
5. Temperature Range: The MOSFET operates effectively over a broad temperature range, ensuring reliability in various environmental conditions.
6. Applications: It is commonly used in switching power supplies, converters, motor drivers, and other power management applications.
7. Enhanced Performance: The device is designed to deliver fast switching speeds and robust performance, crucial for modern electronic circuits.
These features make the FQD2N60CTM a versatile choice for designers looking for a reliable high-voltage MOSFET solution.
Pinout
The FQD2N60CTM is a MOSFET transistor, specifically an N-channel MOSFET. It typically comes in a TO-252 package, also known as DPAK, which usually has 3 pins and a tab. The pin configuration is:
1. Gate (G): Controls the MOSFET's conduction state. A voltage applied here allows current to flow from drain to source.
2. Drain (D): The terminal where current enters the MOSFET when it is in the "on" state.
3. Source (S): The terminal where current exits the MOSFET when it is in the "on" state.
4. Tab: Often connected to the drain and used for heat dissipation.
The FQD2N60CTM is used in applications that require switching and amplification due to its capability to handle high voltage and moderate current. This transistor is suitable for power supply designs and other high-efficiency applications.
1. Gate (G): Controls the MOSFET's conduction state. A voltage applied here allows current to flow from drain to source.
2. Drain (D): The terminal where current enters the MOSFET when it is in the "on" state.
3. Source (S): The terminal where current exits the MOSFET when it is in the "on" state.
4. Tab: Often connected to the drain and used for heat dissipation.
The FQD2N60CTM is used in applications that require switching and amplification due to its capability to handle high voltage and moderate current. This transistor is suitable for power supply designs and other high-efficiency applications.
Manufacturer
The FQD2N60CTM is manufactured by ON Semiconductor, now known as onsemi. Onsemi is a leading semiconductor supplier that designs and manufactures a wide range of semiconductor components. These components are used in various applications, including automotive, communications, computing, consumer electronics, industrial, medical, and military systems. Onsemi focuses on providing energy-efficient and sustainable solutions, offering products such as power management devices, sensors, and connectivity components. The company is recognized for its commitment to innovation and high-performance solutions, catering to the evolving demands of modern technology.
Application
The FQD2N60CTM is a type of N-channel MOSFET known for its high voltage and current handling capabilities. It is commonly used in power management applications, including:
1. Switching Power Supplies: Used to efficiently convert and regulate power.
2. Motor Control: Helps in driving motors by handling high voltages and currents.
3. Inverters: Key component in converting DC to AC power.
4. Lighting Systems: Used in LED and other lighting applications for efficient power control.
5. Load Switches: Helps in controlling loads by acting as an electrical switch.
These applications benefit from the MOSFET's efficiency, fast switching speeds, and reliability in high-power scenarios.
1. Switching Power Supplies: Used to efficiently convert and regulate power.
2. Motor Control: Helps in driving motors by handling high voltages and currents.
3. Inverters: Key component in converting DC to AC power.
4. Lighting Systems: Used in LED and other lighting applications for efficient power control.
5. Load Switches: Helps in controlling loads by acting as an electrical switch.
These applications benefit from the MOSFET's efficiency, fast switching speeds, and reliability in high-power scenarios.
Package
The FQD2N60CTM is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and comes in a TO-252 package, also known as DPAK. This package type is designed for surface mounting and is commonly used in various electronic applications requiring efficient power management.
