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FQD3P50TM
+StücklisteMOSFET P-CH 500V 2.1A DPAK
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HerstellerOnsemi
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Herstellerteil #FQD3P50TM
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Paket DPAK-3
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Auf Lager5697
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | QFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 2.1A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 4.9Ohm @ 1.05A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 23 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 660 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
Übersicht
Description
The naming of components like FQD3P50TM usually includes information about their characteristics. For example, the numbers often indicate the voltage and current specifications, while the letters can denote package type, manufacturing series, or specific features.
For an in-depth understanding of FQD3P50TM, one would need to consult the datasheet provided by the manufacturer. This document would contain detailed specifications such as maximum voltage, current ratings, thermal resistance, gate charge, and switching speed, as well as recommended usage scenarios and circuit integration guidelines. Always refer to the manufacturer's datasheet for the most reliable and precise information.
Equivalent
1. IRF9530 from International Rectifier
2. FQP27P06 from ON Semiconductor
3. SI4925DY from Vishay
Ensure to verify parameters like voltage, current, and package to confirm suitability for your specific application.
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of -500V and a continuous drain current (I_D) of approximately -3A, making it suitable for high-voltage applications.
2. Low On-Resistance: The MOSFET offers a low on-resistance (R_DS(on)), which contributes to reduced power losses and improved efficiency in circuits.
3. Fast Switching: It is designed for fast switching speeds, which makes it ideal for applications requiring high-speed operations.
4. Thermal Performance: The device may come with enhanced thermal characteristics, allowing it to handle higher power levels and operate reliably in varying temperature conditions.
5. Package Type: It is available in standard through-hole or surface-mount package options, making it versatile for different design requirements.
6. Applications: Commonly used in power supply circuits, motor control, inverter circuits, and other high-voltage applications.
These features make the FQD3P50TM a robust choice for designers looking for efficient high-voltage P-channel MOSFETs.
Pinout
1. Gate (G): This pin controls the operation of the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off, allowing current to flow between the drain and source.
2. Drain (D): This is the pin where the main current flows from the transistor when it is in the "on" state.
3. Source (S): This pin is the return path for the current that flows through the drain.
These pins are crucial for connecting the MOSFET correctly in a circuit to ensure proper functionality.
Manufacturer
Application
1. Power Supply Circuits: For switching and controlling power in DC-DC converters and voltage regulators.
2. Load Switches: Managing the load in consumer electronics.
3. Battery Management: Used in battery protection circuits for overcurrent protection.
4. Motor Control: Suitable for low-power motor drivers in applications like fans or small appliances.
5. LED Drivers: Effective in LED lighting applications for dimming and switching.
6. Automotive Applications: Used in various automotive systems for efficient power handling.
Its low on-resistance and fast switching speed make it ideal for these applications.