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FQP34N20
+StücklisteMOSFET N-CH 200V 31A TO220-3
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HerstellerOnsemi
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Herstellerteil #FQP34N20
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Datenblatt FQP34N20 DataSheet
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Paket TO-220-3
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Auf Lager1356
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Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk,Tube |
| Series | QFET® |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 31A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 75mOhm @ 15.5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 78 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 3100 pF @ 25 V |
| Power Dissipation (Max) | 180W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Übersicht
Description
The FQP34N20 is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. Manufactured by ON Semiconductor, this device is popular in power management and conversion applications due to its efficient operation and robustness.
Key features of the FQP34N20 include:
- Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 34A, making it suitable for handling significant power levels.
- Low On-Resistance: With a low R_DS(on), it ensures minimal power loss during operation, enhancing efficiency.
- High-Speed Switching: This MOSFET supports rapid switching speeds, which is beneficial in applications requiring quick response times.
- TO-220 Package: The FQP34N20 is typically housed in a TO-220 package, facilitating easy mounting and heat dissipation.
This MOSFET is commonly used in power supplies, motor controllers, and other applications needing efficient current control in high-voltage environments. Its reliability and performance make it a versatile component in various electronic circuits.
Key features of the FQP34N20 include:
- Voltage and Current Ratings: It has a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 34A, making it suitable for handling significant power levels.
- Low On-Resistance: With a low R_DS(on), it ensures minimal power loss during operation, enhancing efficiency.
- High-Speed Switching: This MOSFET supports rapid switching speeds, which is beneficial in applications requiring quick response times.
- TO-220 Package: The FQP34N20 is typically housed in a TO-220 package, facilitating easy mounting and heat dissipation.
This MOSFET is commonly used in power supplies, motor controllers, and other applications needing efficient current control in high-voltage environments. Its reliability and performance make it a versatile component in various electronic circuits.
Equivalent
The FQP34N20 is an N-channel MOSFET. Equivalent products include the IRF540N, IRF520, and STP55NF06. When considering an equivalent, ensure it matches the key specifications such as voltage rating, current capacity, and Rds(on). Always check the datasheet for exact specifications to confirm compatibility with your application.
Features
The FQP34N20 is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 200V and a continuous drain current (I_D) of 34A, making it suitable for medium to high-power applications.
2. R_DS(on): The on-resistance is low, typically around 0.055 ohms, which helps reduce power loss and improve efficiency during operation.
3. Gate Threshold Voltage (V_GS(th)): The typical gate threshold voltage is between 2.0V and 4.0V, allowing it to be easily driven by low-voltage logic levels.
4. Fast Switching Speed: The FQP34N20 exhibits fast switching characteristics, making it suitable for high-frequency applications.
5. Power Dissipation: It has a maximum power dissipation of approximately 170W when mounted on a suitable heatsink.
6. Package: Typically available in a TO-220 package, which provides efficient heat dissipation.
These features make the FQP34N20 ideal for applications like power supplies, motor drives, and other systems requiring efficient power management.
1. Voltage and Current Ratings: It can handle a drain-source voltage (V_DS) of up to 200V and a continuous drain current (I_D) of 34A, making it suitable for medium to high-power applications.
2. R_DS(on): The on-resistance is low, typically around 0.055 ohms, which helps reduce power loss and improve efficiency during operation.
3. Gate Threshold Voltage (V_GS(th)): The typical gate threshold voltage is between 2.0V and 4.0V, allowing it to be easily driven by low-voltage logic levels.
4. Fast Switching Speed: The FQP34N20 exhibits fast switching characteristics, making it suitable for high-frequency applications.
5. Power Dissipation: It has a maximum power dissipation of approximately 170W when mounted on a suitable heatsink.
6. Package: Typically available in a TO-220 package, which provides efficient heat dissipation.
These features make the FQP34N20 ideal for applications like power supplies, motor drives, and other systems requiring efficient power management.
Pinout
The FQP34N20 is an N-channel MOSFET commonly used in power switching applications. It features a standard 3-pin configuration:
1. Gate (G): This pin is used to control the MOSFET's operation, turning it on or off. Applying a voltage to the gate relative to the source allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the load to the MOSFET. It is connected to the positive side of the circuit in an N-channel MOSFET.
3. Source (S): This pin is connected to the negative side of the circuit and serves as the return path for the current that flows through the drain.
The FQP34N20 is designed to handle high power, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 34A. It is used in applications such as power supplies, motor controllers, and DC-DC converters due to its fast switching and high efficiency.
1. Gate (G): This pin is used to control the MOSFET's operation, turning it on or off. Applying a voltage to the gate relative to the source allows current to flow between the drain and source.
2. Drain (D): The drain is the terminal through which the main current flows from the load to the MOSFET. It is connected to the positive side of the circuit in an N-channel MOSFET.
3. Source (S): This pin is connected to the negative side of the circuit and serves as the return path for the current that flows through the drain.
The FQP34N20 is designed to handle high power, with a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 34A. It is used in applications such as power supplies, motor controllers, and DC-DC converters due to its fast switching and high efficiency.
Manufacturer
The FQP34N20 is a power MOSFET manufactured by ON Semiconductor. ON Semiconductor is a leading semiconductor company that designs and produces a wide range of semiconductor components. It specializes in power and signal management, logic, discrete, and custom devices for various applications, including automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, and military/aerospace. The company is known for its focus on energy-efficient products and solutions that help reduce global energy use.
Application
The FQP34N20 is an N-channel MOSFET with applications in various electronic and power systems. Key areas include:
1. Power Supply Systems: Used in switch-mode power supplies for efficient power conversion.
2. Motor Controllers: Acts as a switch in DC motor controllers, ensuring efficient motor operation.
3. Inverters and Converters: Utilized in DC-AC inverters and DC-DC converters for renewable energy systems.
4. Automotive Electronics: Found in automotive power management systems due to high efficiency and reliability.
5. Load Switches: Employed in electronic circuits to control power to different loads.
6. LED Drivers: Used in LED lighting systems to regulate power and enhance efficiency.
These applications benefit from the FQP34N20's high-speed switching and low on-resistance.
1. Power Supply Systems: Used in switch-mode power supplies for efficient power conversion.
2. Motor Controllers: Acts as a switch in DC motor controllers, ensuring efficient motor operation.
3. Inverters and Converters: Utilized in DC-AC inverters and DC-DC converters for renewable energy systems.
4. Automotive Electronics: Found in automotive power management systems due to high efficiency and reliability.
5. Load Switches: Employed in electronic circuits to control power to different loads.
6. LED Drivers: Used in LED lighting systems to regulate power and enhance efficiency.
These applications benefit from the FQP34N20's high-speed switching and low on-resistance.
Package
The FQP34N20 is a N-channel MOSFET transistor, and it typically comes in a TO-220 package. The TO-220 package is a widely-used, through-hole type with a metal tab for heat dissipation, making it suitable for high-power applications.
