FQP55N10

Abbildungen dienen nur als Referenz

FQP55N10

+Stückliste

MOSFET N-CH 100V 55A TO220-3

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Package / Case Tube
Series QFET®
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 55A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 26mOhm @ 27.5A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 98 nC @ 10 V
Vgs(Max) ±25V
Input Capacitance(Ciss)(Max) @ Vds 2730 pF @ 25 V
Power Dissipation (Max) 155W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

Übersicht

Description

The FQP55N10 is an N-channel MOSFET designed for high-power applications. Key features include:
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): Typically 0.028Ω (at VGS = 10V)
- Fast Switching: Suitable for PWM and motor control
- Package: TO-220 (easy to mount on heatsinks)
Common uses include power supplies, motor drivers, and DC-DC converters. Its high current handling and low RDS(on) minimize power losses, improving efficiency. Always ensure proper gate drive (typically 10V) and thermal management for optimal performance.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the FQP55N10 (100V, 55A N-channel MOSFET) include:
- IRF3205 (55V, 110A) – Lower voltage but higher current.
- IRL40B209 (100V, 40A) – Slightly lower current.
- STP55NF10 (100V, 55A) – Direct alternative.
- IXFH55N10 (100V, 55A) – Similar specs.
Check datasheets for exact compatibility in your circuit.

Features

The FQP55N10 is an N-channel MOSFET with the following key features:
- Voltage Rating: 100V
- Current Rating: 55A (continuous)
- Low On-Resistance (RDS(on)): 0.028Ω (max at VGS = 10V)
- Fast Switching: Suitable for high-efficiency applications
- High Power Handling: Up to 150W
- Avalanche Energy Rated: Enhances ruggedness
- Logic-Level Gate Drive: Compatible with 5V drive (partially enhanced)
- Package: TO-220 (through-hole)
Commonly used in power supplies, motor control, and DC-DC converters. Offers a balance of high current capability and low conduction losses.

Package

The FQP55N10 is an N-channel MOSFET available in a TO-220 package. This through-hole package is commonly used for power applications due to its robust thermal and electrical performance. It features three leads (gate, drain, source) and a metal tab for heat dissipation. The TO-220 package is suitable for high-power circuits, such as motor drivers or power supplies.

Produkte, die mit FQP55N10 zusammenhängen

  • Schnellangebot

  • Senden Sie Ihre Angebotsanfrage für FQP55N10 Mit diesem Formular können Sie uns innerhalb von 12 Stunden kontaktieren.