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G5S12008D
+StücklisteSIC SCHOTTKY DIODE 1200V 8A 2-PI
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HerstellerGlobal Power Technology – GPT
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Herstellerteil #G5S12008D
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Datenblatt G5S12008D DataSheet
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Paket TO-263-3
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Auf Lager5505
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | Global Power Technology-GPT |
| Package / Case | Cut Tape (CT),Tape & Box (TB) |
| Part Status | Active |
| Diode Type | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified(Io) | 26.1A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
| Capacitance @ Vr F | 550pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 |
