Abbildungen dienen nur als Referenz
GPA015A120MN-ND
+StücklisteIGBT 1200V 30A 212W TO3PN
-
HerstellerSemiQ
-
Herstellerteil #GPA015A120MN-ND
-
Datenblatt GPA015A120MN-ND DataSheet
-
Paket TO-3P-3
-
Auf Lager6918
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Supplier | SemiQ |
| Package / Case | Tube |
| Part Status | Obsolete |
| IGBT Type | NPT and Trench |
| Voltage - Collector Emitter Breakdown(Max) | 1200 V |
| Current - Collector(Ic)(Max) | 30 A |
| Current - Collector Pulsed(Icm) | 45 A |
| Vce(on)(Max) @ Vge Ic | 2.5V @ 15V, 15A |
| Power - Max | 212 W |
| Switching Energy | 1.61mJ (on), 530µJ (off) |
| Input Type | Standard |
| Gate Charge | 210 nC |
| Td(on / off) @ 25°C | 25ns/166ns |
| Test Condition | 600V, 15A, 10Ohm, 15V |
| Reverse Recovery Time (trr) | 320 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
