HGTG30N60A4

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HGTG30N60A4

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IGBT 600V 75A TO-247-3

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  • Herstellerteil #HGTG30N60A4

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Spezifikationen

Attribut Wert
Part Status Obsolete
Base Product Number HGTG30
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 75 A
Current - Collector Pulsed (Icm) 240 A
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 30A
Power - Max 463 W
Switching Energy 280µJ (on), 240µJ (off)
Input Type Standard
Gate Charge 225 nC
Td (on / off) @ 25°C 25ns/150ns
Test Condition 390V, 30A, 3Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Packaging Tube

Übersicht

Description

The HGTG30N60A4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, designed for power switching applications.
### Key Features:
- Voltage Rating: 600V
- Current Rating: 60A (continuous)
- Low VCE(sat): Reduces conduction losses
- Fast Switching: Optimized for efficiency in inverters, motor drives, and UPS systems
- Robust Design: High short-circuit withstand capability
### Applications:
- Motor drives
- Industrial inverters
- Uninterruptible Power Supplies (UPS)
- Renewable energy systems
### Package:
TO-247 (3-pin), ensuring good thermal performance.
This IGBT is ideal for high-power, high-frequency switching with low losses. For detailed specs, refer to Infineon’s datasheet.

Features

The HGTG30N60A4 is an IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 600V (collector-emitter, VCES)
- Current Rating: 60A (collector current, IC)
- Low VCE(sat): 1.85V (typical at 30A, reducing conduction losses)
- Fast Switching: Optimized for high-frequency applications
- High Temperature Operation: Rated up to 175°C (junction temperature)
- Robust & Reliable: Features short-circuit withstand capability
- Package: TO-247 (3-pin), suitable for power applications
Designed for motor drives, inverters, and power supplies, it balances efficiency and switching performance.

Pinout

The HGTG30N60A4 is an IGBT (Insulated Gate Bipolar Transistor) with the following key specifications:
- Pin Count: 3 (standard TO-247 package: Gate (G), Collector (C), Emitter (E)).
- Function: High-power switching in applications like motor drives, inverters, and power supplies.
- Voltage Rating: 600V (collector-emitter).
- Current Rating: 60A (continuous collector current).
- Features: Low saturation voltage, fast switching, and built-in anti-parallel diode (in some variants).
Designed for efficiency in high-voltage, high-current circuits.

Package

The HGTG30N60A4 is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247 package. This package type is widely used for high-power applications due to its robust thermal and electrical performance. The TO-247 features three leads (gate, collector, emitter) and is designed for efficient heat dissipation, making it suitable for demanding circuits like motor drives and power supplies.

Frequently Asked Questions


Q: What is the maximum collector current for the HGTG30N60A4?
A: The maximum continuous collector current (Ic) is 75 A, with a pulsed current (Icm) rating of 240 A.


Q: What is the typical switching energy for this IGBT?
A: The switching energy is 280 μJ (turn-on) and 240 μJ (turn-off) under test conditions of 390V, 30A, and 3Ω gate resistance.


Q: What is the gate charge requirement for driving this device?
A: The total gate charge is 225 nC, which should be considered when selecting a gate driver to ensure sufficient drive current.


Q: Can this component operate at high temperatures?
A: Yes, the operating junction temperature range is -55°C to +150°C, suitable for demanding thermal environments.


Q: What is the saturation voltage (Vce(on)) at rated current?
A: The typical Vce(on) is 2.6V at a gate voltage of 15V and collector current of 30A, ensuring low conduction losses.


Q: Is the HGTG30N60A4 RoHS compliant?
A: The provided parameters do not specify RoHS status. Please consult the manufacturer's latest datasheet for compliance details.


Q: What mounting package does this IGBT use?
A: It uses a through-hole TO-247-3 package, suitable for standard heatsink mounting in power applications.


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