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HGTG30N60A4D
+StücklisteIGBT 600V 75A TO-247-3
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HerstellerOnsemi
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Herstellerteil #HGTG30N60A4D
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Auf Lager1400
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Spezifikationen
| Attribut | Wert |
| Part Status | Obsolete |
| Base Product Number | HGTG30N60 |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 75 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Power - Max | 463 W |
| Switching Energy | 280µJ (on), 240µJ (off) |
| Input Type | Standard |
| Gate Charge | 225 nC |
| Td (on / off) @ 25°C | 25ns/150ns |
| Test Condition | 390V, 30A, 3Ohm, 15V |
| Reverse Recovery Time (trr) | 55 ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Packaging | Tube |
Übersicht
Description
Key specifications include a collector-emitter voltage (V_CE) rating of 600V and a continuous collector current (I_C) rating of 60A. It features fast switching capabilities due to its low gate charge and high-speed diode, which helps in reducing switching losses. This makes the HGTG30N60A4D ideal for applications requiring high efficiency and compact design.
The device is typically housed in a TO-247 package, which provides excellent thermal performance. Overall, this IGBT offers a balance of performance, efficiency, and reliability, making it a popular choice in power electronics.
Equivalent
Features
1. Voltage and Current Ratings: It has a collector-emitter voltage rating of 600V and a continuous collector current of 60A, making it suitable for high-power applications.
2. Low Saturation Voltage: The device exhibits low saturation voltage, which helps in reducing power loss and improving efficiency.
3. Fast Switching: Designed for rapid switching, it supports high-frequency operations, which is beneficial for applications such as motor drives and inverters.
4. Rugged Design: The transistor offers high durability with a short-circuit withstand time, enhancing reliability in demanding environments.
5. Built-In Diode: It includes a co-packaged fast recovery diode, which simplifies the design and reduces the need for external components.
6. TO-247 Package: The device is housed in a TO-247 package, offering a robust, compact form factor with effective heat dissipation.
These features make the HGTG30N60A4D ideal for applications requiring efficient, reliable power switching and control.
Pinout
1. Gate (G): This pin is used to control the IGBT. Applying a voltage to the gate controls the flow of current between the collector and emitter.
2. Collector (C): This pin is the main current-carrying terminal, which is connected to the positive voltage supply in a circuit.
3. Emitter (E): This pin is connected to the load or ground, completing the circuit for current flow when the IGBT is turned on.
The HGTG30N60A4D is designed for high-speed switching applications, making it suitable for use in applications such as motor drives, inverters, and power supplies. It combines the characteristics of both MOSFETs and bipolar transistors, offering high input impedance and fast switching capabilities.
Manufacturer
In 2016, Fairchild Semiconductor was acquired by ON Semiconductor (now known as onsemi). Onsemi is a leading supplier of semiconductor-based solutions, offering a broad portfolio of products addressing a range of industries including automotive, industrial, consumer electronics, and communications. The company's focus is on energy-efficient innovations, providing solutions that improve energy efficiency and enable new technologies for smart power management and connectivity.
Application
1. Industrial Motor Drives: Used in controlling the speed and torque of electric motors.
2. Power Inverters: Essential for converting DC to AC power in solar inverters and uninterruptible power supplies (UPS).
3. Switch Mode Power Supplies (SMPS): For efficient power conversion in industrial and consumer electronics.
4. Welding Equipment: Provides the necessary power control and efficiency.
5. HVAC Systems: Used in systems requiring efficient power management.
6. Electric Vehicles: Employed in powertrain components for efficient energy management.
These applications benefit from the IGBT’s high efficiency, fast switching, and robust performance.
Package
Frequently Asked Questions
Q: What is the maximum collector current for the HGTG30N60A4D?
A: The maximum continuous collector current (Ic) is 75 A, with a pulsed current (Icm) capability of 240 A.
Q: What is the voltage rating of this IGBT?
A: The voltage - Collector Emitter Breakdown (Max) is 600 V, suitable for high-voltage applications.
Q: Is this device suitable for high-frequency switching?
A: Yes, with typical turn-on delay (td(on)) of 25 ns and turn-off delay (td(off)) of 150 ns at 25°C, it is optimized for fast switching.
Q: What type of gate drive is required for this IGBT?
A: It has a standard input type, requiring a gate voltage of 15 V, with a total gate charge of 225 nC.
Q: What is the power dissipation limit for this component?
A: The maximum power dissipation is 463 W, allowing robust thermal performance under high load conditions.
Q: Does this IGBT have an integrated diode?
A: Yes, it includes an internal diode with a reverse recovery time (trr) of 55 ns for efficient freewheeling operation.
Q: What is the operating temperature range for reliable use?
A: The junction temperature (TJ) range is -55°C to 150°C, ensuring stable performance in harsh environments.
