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IRF640NSTRLPBF
+StücklisteHEXFET POWER MOSFET
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HerstellerInternationaler Gleichrichter
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Herstellerteil #IRF640NSTRLPBF
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Paket TO-263-3
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Auf Lager4245
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Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk |
| Series | HEXFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain(Id) @ 25°C | 18A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 150mOhm @ 11A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 67 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1160 pF @ 25 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK |
Übersicht
Description
Key specifications include a drain-to-source voltage (V_DS) of 200V and a continuous drain current (I_D) of up to 18A. The device also supports high-speed switching, making it suitable for use in applications such as motor drives, DC-DC converters, and switching power supplies.
The IRF640NSTRLPBF is part of the International Rectifier series and is packaged in a TO-262 form factor, providing ease of installation and thermal management. It is lead-free and RoHS compliant, aligning with environmental standards. This MOSFET is widely appreciated for its robustness and reliability in various electronic designs.
Equivalent
1. STMicroelectronics STP14NF10
2. ON Semiconductor NTP6410ANG
3. Vishay Siliconix SiHF640N
4. Infineon IPP60R190C6
5. Fairchild Semiconductor FDP18N50
These equivalents share similar voltage and current ratings and can be used in applications requiring N-channel MOSFETs with comparable performance. Always verify the specifications and compatibility with your specific application.
Features
1. Voltage and Current Ratings: It has a drain-source voltage (V_ds) of 200V and a continuous drain current (I_d) of 18A.
2. RDS(on): It offers a low on-state resistance of around 0.18 ohms, improving efficiency by reducing power losses during operation.
3. TO-220 Package: This MOSFET is packaged in a TO-220 form factor, which is common for power devices, providing good thermal performance and easy mounting.
4. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
5. Temperature Range: It can operate in a wide temperature range, from -55°C to 175°C, ensuring reliability in various environments.
6. Lead-Free: The "PBF" suffix indicates it is lead-free, aligning with RoHS compliance for environmental safety.
These features make it suitable for applications like power supplies, motor drives, and other systems requiring efficient power management.
Pinout
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, you can turn the MOSFET on or off.
2. Drain (D): This is where the current enters the MOSFET when it is in the "on" state. It is connected to the load in the circuit.
3. Source (S): This pin is where the current exits the MOSFET. It is typically connected to ground or the lower voltage side of the circuit.
The IRF640NSTRLPBF is used for switching applications and power regulation, handling high voltages and currents with low on-resistance.
Manufacturer
Application
1. Power Supplies: Used in switching power supplies and converters to efficiently manage voltage and current.
2. Motor Control: Employed in motor driver circuits for controlling DC motors in industrial and automotive systems.
3. Audio Amplifiers: Utilized in audio amplifiers to provide clear and strong sound output.
4. Inverters: Applied in inverter circuits for converting DC to AC power.
5. LED Drivers: Used in LED driver circuits for consistent lighting solutions.
Its high voltage and current ratings, along with low on-resistance, make it ideal for high-efficiency power management applications.