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IRF7424TRPBF
+StücklisteIRF7424 - 20V-250V P-CHANNEL POW
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HerstellerInternationaler Gleichrichter
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Herstellerteil #IRF7424TRPBF
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Datenblatt IRF7424TRPBF DataSheet
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Paket SOIC-8
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Auf Lager1921
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Spezifikationen
| Attribut | Wert |
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 11A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 13.5mOhm @ 11A, 10V |
| Vgs(th)(Max)@Id | 2.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 110 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4030 pF @ 25 V |
| PowerDissipation(Max) | 2.5W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-SO |
Übersicht
Description
Key characteristics:
- Logic-level gate drive (fully enhanced at 4.5V VGS).
- Fast switching for efficiency in power applications.
- Low gate charge (QG) for reduced drive losses.
Common uses include DC-DC converters, motor control, load switching, and battery management. Its dual-MOSFET design saves board space in compact designs.
For detailed specs, refer to the datasheet on Infineon’s website.
Equivalent
- IRF7424PBF (same specs, different packaging)
- IRF7416PBF (similar specs, -60V, -10A)
- Si7137DP-T1-GE3 (Vishay, -55V, -12A)
- FDS6679AZ (Fairchild, -60V, -11A)
Always verify datasheets for exact compatibility.
Features
- Voltage Rating: -20V (Drain-to-Source, VDS)
- Current Rating: -12A (Continuous Drain Current, ID)
- Low On-Resistance: 9.5mΩ (max) @ VGS = -10V
- Fast Switching: Low gate charge (Qg = 38nC) and low input capacitance (Ciss = 2200pF)
- Gate Drive Voltage (VGS): ±20V (max)
- Power Dissipation: 3.1W (TA = 25°C)
- Package: SOIC-8 (Compact surface-mount)
- Applications: Power management, load switching, DC-DC converters, and battery protection.
Designed for high efficiency and low power loss, it’s ideal for portable and automotive systems.
Pinout
Key Functions:
- Pins 1, 2, 3 (Drain 1, Gate 1, Source 1): First MOSFET channel.
- Pins 6, 7, 8 (Drain 2, Gate 2, Source 2): Second MOSFET channel.
- Pins 4 & 5: Not internally connected (N/C).
Features:
- 30V drain-source voltage (VDS)
- 4.3A continuous drain current (ID)
- Logic-level gate drive (VGS = 4.5V)
- Low on-resistance (RDS(on) = 45mΩ max)
Commonly used in power switching, DC-DC converters, and motor control.
Application
1. Power Management – DC-DC converters, voltage regulation.
2. Motor Control – H-bridge circuits for small motors.
3. Load Switching – Efficient power switching in portable devices.
4. Automotive Systems – LED drivers, infotainment power control.
5. Battery-Powered Devices – Energy-efficient applications like laptops and IoT devices.
Its compact SO-8 package and low on-resistance make it ideal for space-constrained, high-efficiency designs.
