IRG4PH30KPBF

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IRG4PH30KPBF

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IGBT 1200V 20A 100W TO247AC

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Spezifikationen

Attribut Wert
Package / Case Tube
Part Status Obsolete
Voltage - Collector Emitter Breakdown(Max) 1200 V
Current - Collector(Ic)(Max) 20 A
Current - Collector Pulsed(Icm) 40 A
Vce(on)(Max) @ Vge Ic 4.2V @ 15V, 10A
Power - Max 100 W
Switching Energy 640µJ (on), 920µJ (off)
Input Type Standard
Gate Charge 53 nC
Td(on / off) @ 25°C 28ns/200ns
Test Condition 960V, 10A, 23Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole

Übersicht

Equivalent

Equivalent products to the IRG4PH30KPBF IGBT chip include:
- IRG4PH30UDPBF (similar specs, different package)
- IRG4PH30KDPBF (alternative with updated characteristics)
- STGW30H60DF (STMicroelectronics alternative)
- HGTG30N60A4D (Fairchild/Renesas alternative)
- FGA30N60SMD (ON Semiconductor alternative)
Check datasheets for exact compatibility in voltage (600V), current (23A), and switching characteristics.

Features

The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) with the following key features:
- Voltage Rating: 600V (VCES)
- Current Rating: 18A (IC @25°C)
- Low VCE(sat): 1.8V (typical) for reduced conduction losses
- Fast Switching: Optimized for high-frequency applications
- High Input Impedance: MOSFET-like gate drive characteristics
- Robust Design: Built-in anti-parallel diode for inductive load handling
- Temperature Range: -55°C to +150°C (Tj)
- Package: TO-247AC (3-pin) for efficient heat dissipation
Ideal for motor drives, inverters, and power switching applications.

Pinout

The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) with a TO-247AC package, featuring 3 pins:
1. Gate (G) – Controls switching via a voltage signal.
2. Collector (C) – Main current input (high voltage side).
3. Emitter (E) – Current output (ground/reference side).
Key Functions:
- Designed for high-power switching (e.g., inverters, motor drives).
- Rated for 1200V VCES and 30A IC (at 100°C).
- Includes a fast recovery anti-parallel diode for inductive load protection.
Applications: UPS, welding machines, and industrial power systems.

Manufacturer

The IRG4PH30KPBF is manufactured by Infineon Technologies, a leading German semiconductor company specializing in power electronics, microcontrollers, and security solutions. Infineon is known for high-performance components used in automotive, industrial, and consumer applications.
The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for power switching in applications like motor drives and inverters. Infineon's products are widely recognized for reliability and efficiency in demanding environments.

Application

The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) commonly used in:
1. Power Electronics – Inverters, converters, and motor drives.
2. Industrial Applications – Welding machines, induction heating, and UPS systems.
3. Renewable Energy – Solar inverters and wind power systems.
4. Consumer Electronics – High-power appliances like air conditioners and refrigerators.
5. Automotive – Electric vehicle (EV) charging and traction control systems.
Its high voltage (600V) and current (24A) ratings make it suitable for medium-power switching applications requiring efficiency and reliability.

Package

The IRG4PH30KPBF is an IGBT (Insulated Gate Bipolar Transistor) in a TO-247AC package. This package type is a through-hole, three-lead design with a metal tab for heat dissipation, commonly used for high-power applications. It provides robust thermal and electrical performance, suitable for switching and motor control circuits.

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