IRLML6401TRPBF

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IRLML6401TRPBF

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MOSFET P-CH 12V 4.3A SOT23

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Attribut Wert
Series HEXFET®
Part Status Last Time Buy
Base Product Number IRLML6401
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 50mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 830 pF @ 10 V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Übersicht

Description

The IRLML6401TRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Infineon Technologies. It is commonly used in electronic circuits for switching and amplification purposes. This particular MOSFET is designed for high efficiency and performance, making it suitable for applications such as power management, DC-DC converters, load switching, and motor drives.
The IRLML6401TRPBF features a low on-resistance, which enables it to handle high currents with minimal power loss. It operates at a low voltage, making it compatible with a wide range of electronic devices and systems. The compact SOT-23 package allows for space-saving designs, which is particularly beneficial in compact or portable devices.
With a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of around 3.7A, the IRLML6401TRPBF is suitable for medium power applications. It also offers fast switching speeds, which enhances its efficiency in high-frequency applications. Overall, this MOSFET is a versatile component in modern electronic designs.

Equivalent

The IRLML6401TRPBF is a P-channel MOSFET. Equivalent products could include:
1. BS250P - A P-channel MOSFET with similar voltage and current ratings.
2. SI2323DS - Offers comparable performance in a similar package.
3. FDS6679 - Another P-channel MOSFET with similar specifications.
When selecting an equivalent, ensure to verify the voltage, current ratings, package type, and any specific application requirements.

Features

The IRLML6401TRPBF is an N-channel MOSFET produced by Infineon Technologies, designed for a variety of applications. Key features include:
1. Voltage and Current Ratings: It has a maximum drain-source voltage (V_ds) of 20V and can handle a continuous drain current (I_d) of 3.7A at a 25°C ambient temperature.
2. Low On-Resistance: The MOSFET features a low on-resistance (R_ds(on)) of approximately 0.045 ohms, enhancing efficiency by minimizing power loss.
3. Package Type: It is housed in a compact SOT-23 package, making it suitable for space-constrained applications.
4. Fast Switching: The device supports fast switching speeds, which is beneficial for high-frequency applications.
5. Applications: It is commonly used in power management, load switching, and DC-DC conversion.
6. Temperature Range: Operates within a wide temperature range from -55°C to 150°C, ensuring reliability in various environments.
These features make the IRLML6401TRPBF suitable for consumer electronics, automotive applications, and other areas requiring efficient power switching.

Pinout

The IRLML6401TRPBF is a P-channel MOSFET designed for switching applications. It typically comes in a SOT-23 package, which is a small-outline transistor configuration. The pin count for this package is three, and the functions of the pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Source (S): This pin is the source of charge carriers, typically connected to the ground or a lower potential in P-channel MOSFET applications.
3. Drain (D): This pin is the output where the load is connected. Current flows from source to drain when the MOSFET is in the on-state.
The IRLML6401TRPBF is designed to handle relatively low to moderate power levels and is often used in applications such as DC-DC converters, battery management, and load switching.

Manufacturer

The IRLML6401TRPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor company that designs, develops, manufactures, and markets a wide range of semiconductor products, including microcontrollers, sensors, power semiconductors, and security integrated circuits. Infineon is known for its focus on automotive, industrial, and security applications, providing solutions that emphasize energy efficiency, mobility, and security. As a major player in the global semiconductor industry, the company aims to address the technological needs of modern society through its innovative semiconductor solutions.

Application

The IRLML6401TRPBF is a P-channel MOSFET commonly used in various electronic applications. It is suitable for load switching, power management, and battery protection in portable devices due to its low on-resistance and compact size. Additionally, it finds use in DC-DC converters, motor control circuits, and LED drivers, where efficient power handling is essential. Its small SOT-23 package makes it ideal for space-constrained applications in consumer electronics, telecommunications, and automotive systems.

Package

The IRLML6401TRPBF is a MOSFET transistor housed in a Surface-Mount Device (SMD) package type known as SOT-23. This package is compact, making it suitable for space-constrained applications in electronic circuits.

Frequently Asked Questions


Q: What is the maximum drain current for this P-Channel MOSFET at 25°C?
A: The continuous drain current (Id) is rated at 4.3A (Ta) at 25°C ambient temperature.


Q: What is the typical gate threshold voltage (Vgs(th)) for the IRLML6401TRPBF?
A: The maximum Vgs(th) is 950mV at 250μA, making it suitable for low-voltage logic level drive.


Q: Can this MOSFET be driven directly by a 1.8V logic signal?
A: Yes, the drive voltage range includes 1.8V for achieving Rds(on) minimum, ideal for low-voltage applications.


Q: What is the maximum power dissipation of this device in SOT-23 package?
A: The max power dissipation is 1.3W (Ta), suitable for low-power portable electronic designs.


Q: What is the maximum drain-to-source voltage (Vdss) rating?
A: The Vdss rating is 12V, making it appropriate for 3.7V Li-ion or 5V logic power management.


Q: What is the typical input capacitance (Ciss) value for switching applications?
A: The maximum Ciss is 830pF at Vds=10V, enabling efficient high-frequency switching.


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