IXFH6N100F

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IXFH6N100F

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MOSFET N-CH 1000V 6A TO247

  • HerstellerIXYS

  • Herstellerteil #IXFH6N100F

  • Auf Lager8655

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Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series HiPerFET™, F Class
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain(Id) @ 25°C 6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 1.9Ohm @ 3A, 10V
Vgs(th)(Max) @ Id 5.5V @ 2.5mA
Gate Charge(Qg)(Max) @ Vgs 54 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1770 pF @ 25 V
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247 (IXFH)

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