IXFN100N10S2

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IXFN100N10S2

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MOSFET N-CH 100V 100A SOT-227B

  • HerstellerIXYS

  • Herstellerteil #IXFN100N10S2

  • Auf Lager4072

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7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series HiPerFET™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain(Id) @ 25°C 100A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 15mOhm @ 500mA, 10V
Vgs(th)(Max) @ Id 4V @ 4mA
Gate Charge(Qg)(Max) @ Vgs 180 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 4500 pF @ 25 V
Power Dissipation (Max) 360W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount
Supplier Device Package SOT-227B

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