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IXFP20N85X
+StücklisteMOSFET N-CH 850V 20A TO220AB
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HerstellerIXYS
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Herstellerteil #IXFP20N85X
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Auf Lager7313
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Spezifikationen
| Attribut | Wert |
| Supplier | IXYS |
| Package / Case | Tube |
| Series | HiPerFET™, Ultra X |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 850 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 330mOhm @ 500mA, 10V |
| Vgs(th)(Max) @ Id | 5.5V @ 2.5mA |
| Gate Charge(Qg)(Max) @ Vgs | 63 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1660 pF @ 25 V |
| Power Dissipation (Max) | 540W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
Übersicht
Description
IXFP20N85X is an IXYS/IXFET N-channel enhancement‑mode power MOSFET. It’s a high‑voltage, high‑current switching device designed for power electronics.
Key points:
- Vds: 85 V; Id (continuous) around 20 A (values depend on package and temperature).
- Rds(on): low enough for efficient switching (typical values in the tens of milliohms range, varying by package and temp).
- Gate threshold: typically 2–4 V; max Vgs ±12 V (drive requirements depend on your design).
- Features: includes a fast intrinsic body diode; suitable for switching in SMPS, motor drives, DC‑DC converters, and similar power stages.
- Notes: exact electrical characteristics (Rds(on) at your gate drive, switching times, SOA) depend on package, temperature, and lot. Always consult the latest datasheet for precise specs.
If you want, I can summarize the latest datasheet once you specify the package variant.
Key points:
- Vds: 85 V; Id (continuous) around 20 A (values depend on package and temperature).
- Rds(on): low enough for efficient switching (typical values in the tens of milliohms range, varying by package and temp).
- Gate threshold: typically 2–4 V; max Vgs ±12 V (drive requirements depend on your design).
- Features: includes a fast intrinsic body diode; suitable for switching in SMPS, motor drives, DC‑DC converters, and similar power stages.
- Notes: exact electrical characteristics (Rds(on) at your gate drive, switching times, SOA) depend on package, temperature, and lot. Always consult the latest datasheet for precise specs.
If you want, I can summarize the latest datasheet once you specify the package variant.
Equivalent
Equivalent parts for IXFP20N85X (20 A, 85 V N-channel MOSFET) include:
- STP20NF85 (STMicroelectronics)
- FQP20N85C (Fairchild/ON Semiconductor)
- IRFP20N85 (Infineon/International Rectifier)
Note: verify package, Rds(on), and gate threshold via datasheet cross-references.
- STP20NF85 (STMicroelectronics)
- FQP20N85C (Fairchild/ON Semiconductor)
- IRFP20N85 (Infineon/International Rectifier)
Note: verify package, Rds(on), and gate threshold via datasheet cross-references.
Features
IXFP20N85X is a high-voltage, high-current N-channel MOSFET from the IXYS IXFP family.
Key features:
- N-channel enhancement-mode power MOSFET
- Vds: 85 V, Id: 20 A
- Low on-resistance for efficient conduction
- Fast switching with low gate charge
- Rugged avalanche energy capability
- Wide operating temp range up to 150°C TJ
- Suitable for switching and linear power‑control in automotive/industrial apps
- Available in standard power packages (e.g., TO-220, D2PAK) depending on variant
- RoHS-compliant
Note: exact Rds(on), gate charge, and packaging depend on the specific device variant—please consult the datasheet for precise numbers.
Key features:
- N-channel enhancement-mode power MOSFET
- Vds: 85 V, Id: 20 A
- Low on-resistance for efficient conduction
- Fast switching with low gate charge
- Rugged avalanche energy capability
- Wide operating temp range up to 150°C TJ
- Suitable for switching and linear power‑control in automotive/industrial apps
- Available in standard power packages (e.g., TO-220, D2PAK) depending on variant
- RoHS-compliant
Note: exact Rds(on), gate charge, and packaging depend on the specific device variant—please consult the datasheet for precise numbers.
Pinout
Pin count: 3 pins (G, D, S), with the Drain typically connected to the metal tab.
Function: N-channel enhancement-mode power MOSFET (high-voltage switch), rated about 850 V and 20 A. Gate controls conduction; Drain is the main current node (tab), Source is the return.
Function: N-channel enhancement-mode power MOSFET (high-voltage switch), rated about 850 V and 20 A. Gate controls conduction; Drain is the main current node (tab), Source is the return.
Manufacturer
- Manufacturer: IXYS Corporation (brand IXFP; IXFP20N85X). IXYS is now part of Littelfuse.
- Company type: A global semiconductor company specializing in power semiconductors (MOSFETs, IGBTs, high-voltage switches) and related protection devices.
- Company type: A global semiconductor company specializing in power semiconductors (MOSFETs, IGBTs, high-voltage switches) and related protection devices.
Application
IXFP20N85X is a high‑voltage, high‑current N‑channel power switch (MOSFET). Typical applications include:
- Offline switching power supplies and PFC/DC‑DC converters
- Motor drives and inverter stages for AC motors
- Solar inverters and other renewable‑energy power electronics
- Uninterruptible power supplies (UPS) and telecom power systems
- Automotive power electronics (DC‑DC converters, e‑drives)
- Industrial controls and front‑end power stages for chargers
Note: consult the datasheet for exact voltage/current ratings and package details.
- Offline switching power supplies and PFC/DC‑DC converters
- Motor drives and inverter stages for AC motors
- Solar inverters and other renewable‑energy power electronics
- Uninterruptible power supplies (UPS) and telecom power systems
- Automotive power electronics (DC‑DC converters, e‑drives)
- Industrial controls and front‑end power stages for chargers
Note: consult the datasheet for exact voltage/current ratings and package details.
Package
TO-220AB (through-hole) package.
