IXFX520N075T2

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IXFX520N075T2

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MOSFET N-CH 75V 520A PLUS247-3

  • HerstellerIXYS

  • Herstellerteil #IXFX520N075T2

  • Paket TO-247-3

  • Auf Lager2471

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Spezifikationen

Attribut Wert
Package / Case Tube
Series HiPerFET™, TrenchT2™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain(Id) @ 25°C 520A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 2.2mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 5V @ 8mA
Gate Charge(Qg)(Max) @ Vgs 545 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 41000 pF @ 25 V
Power Dissipation (Max) 1250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PLUS247™-3

Übersicht

Description

The IXFX520N075T2 is a power MOSFET manufactured by IXYS, designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 75V and a continuous drain current (I_D) of 520A. This N-channel MOSFET is known for its low on-state resistance, which minimizes power losses and enhances performance in demanding environments. It is typically used in applications such as motor drives, power supplies, and DC-DC converters.
The device is built using advanced silicon technology to handle high current levels while maintaining thermal stability. Its robust design ensures reliable operation under various electrical stresses. The IXFX520N075T2 also incorporates features like fast switching speed and low gate charge, which contribute to its efficiency.
In summary, the IXFX520N075T2 is a versatile, high-current MOSFET well-suited for industrial and commercial power management systems, offering a balance of performance, reliability, and efficiency.

Equivalent

The IXFX520N075T2 is a power MOSFET from IXYS, typically used in applications requiring efficient power management. Equivalent or similar products can be found from other manufacturers, such as Infineon, STMicroelectronics, or ON Semiconductor. When searching for equivalents, consider parameters like voltage and current ratings, RDS(on), switching speed, and package type. Check products like Infineon's IPP60R190P6, STMicroelectronics’ STP75NF75, or ON Semiconductor's FDP047N08 for potential alternatives, ensuring they meet your specific application requirements.

Features

The IXFX520N075T2 is a power MOSFET designed for high-efficiency switching applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 75V, making it suitable for medium-voltage applications.
2. Current Rating: The MOSFET can handle a continuous drain current (Id) of up to 520A, enabling it to support high-power applications.
3. Rds(on): It offers a low on-state resistance, enhancing efficiency by reducing power losses during operation.
4. Package Type: It typically comes in a TO-247 package, which provides good thermal performance and is easy to mount on a circuit board.
5. Fast Switching: The device is designed for fast switching speeds, which helps in reducing switching losses and improving overall efficiency in switching applications.
6. Thermal Performance: It is equipped with features that enhance thermal management, ensuring reliable operation under high loads.
7. Robust Design: The MOSFET is designed to withstand high energy pulses in the avalanche and commutation mode, making it robust against voltage spikes.
These features make the IXFX520N075T2 suitable for various industrial and automotive applications.

Pinout

The IXFX520N075T2 is a power MOSFET manufactured by IXYS Corporation. It is specifically designed for applications requiring high efficiency and fast switching. This MOSFET comes in a TO-263 (D²PAK) package, which is a surface-mount package with three pins. The pin count and functions are as follows:
1. Pin 1 (Gate): This is the control terminal used to turn the MOSFET on or off. A voltage applied to the gate modulates the conductivity between the drain and source.
2. Pin 2 (Drain): The drain is one of the main current-carrying terminals. In power applications, it is connected to the load.
3. Pin 3 (Source): The source is the other main current-carrying terminal. It is typically connected to the ground or the negative side of the power supply.
The IXFX520N075T2 is used in high-speed switching applications such as power supplies, motor drives, and other power management systems due to its low on-resistance and high current handling capabilities.

Manufacturer

The IXFX520N075T2 is manufactured by IXYS Corporation. IXYS is a company that specializes in the development and production of power semiconductors and integrated circuits. Founded in 1983, IXYS is known for its focus on power management solutions, offering products such as MOSFETs, IGBTs, rectifiers, and power modules. These components are utilized across various industries, including consumer electronics, automotive, telecommunications, and industrial applications, to improve energy efficiency and manage power effectively.

Application

The IXFX520N075T2 is a high-performance IGBT (Insulated Gate Bipolar Transistor) designed for applications requiring efficient power management and switching. Key application areas include:
1. Inverters: Used in renewable energy systems like solar inverters for efficient DC to AC conversion.
2. Motor Drives: Ideal for industrial motor control applications, providing precise speed and torque control.
3. Switching Power Supplies: Enhances efficiency in AC/DC and DC/DC converters.
4. Uninterruptible Power Supplies (UPS): Ensures reliable power backup with efficient energy conversion.
5. Electric Vehicles: Applied in traction inverters and charging systems for improved energy efficiency.
These applications benefit from the IGBT's low on-state voltage drop and fast switching capabilities.

Package

The IXFX520N075T2 is an N-channel MOSFET, and it typically comes in a TO-264 package. This package type is designed for high-power applications and provides efficient thermal management.

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