IXTP8N50PM

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IXTP8N50PM

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MOSFET N-CH 500V 4A TO220AB

  • HerstellerIXYS

  • Herstellerteil #IXTP8N50PM

  • Auf Lager8628

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Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Series PolarHV™
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain(Id) @ 25°C 4A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 800mOhm @ 4A, 10V
Vgs(th)(Max) @ Id 5.5V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 20 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 1050 pF @ 25 V
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3

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