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K4A8G085WB-BIRC
+StücklisteFBGA-78 Memory (ICs) RoHS
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HerstellerSamsung
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Herstellerteil #K4A8G085WB-BIRC
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Datenblatt K4A8G085WB-BIRC DataSheet
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Auf Lager16991
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Spezifikationen
| Attribut | Wert |
| Packaging | FBGA-78 |
Übersicht
Description
Key Features:
- Capacity: 8Gb (1GB)
- Speed: Up to 3200 Mbps (DDR4-3200)
- Voltage: 1.2V (standard DDR4)
- Organization: x8 (8-bit data bus)
- Density: 1G x 8
- Package: 78-ball FBGA (Fine-pitch Ball Grid Array)
- Operating Temp: Industrial-grade (-40°C to +95°C)
Applications:
- Servers, networking, and enterprise storage
- Industrial PCs and embedded systems
- Automotive and ruggedized electronics
This chip supports auto-refresh, self-refresh, and low-power modes, making it suitable for power-sensitive applications. Its high-speed interface ensures efficient data transfer in demanding environments.
For detailed specs, refer to Samsung’s official datasheet.
Equivalent
- Micron: MT40A1G8SA-075 (8Gb DDR4)
- SK Hynix: H5AN8G6NAFR (8Gb DDR4)
- Nanya: NT6AN8T0SA (8Gb DDR4)
These chips share similar specs (speed, density, voltage) and are drop-in replacements in many applications. Verify pin compatibility and timing parameters for your specific design.
Pinout
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 16-bit data bus (DQ0-DQ15).
- Bank Group (BG0-BG1) and Bank Address (BA0-BA1) for memory organization.
- Row/Column Address (A0-A15) for memory access.
- Command Pins (RAS#, CAS#, WE#, CS#) for control signals.
- Clock (CK_t/CK_c) and Data Strobe (DQS_t/DQS_c) for synchronization.
- VDD/VDDQ for power (1.2V) and VSS/VSSQ for ground.
It operates at DDR4-3200 (1600 MHz clock) and supports auto-refresh, self-refresh, and on-die termination (ODT).
Application
- Data centers & servers (high-speed memory for cloud computing)
- Enterprise storage systems (performance-critical applications)
- Networking equipment (routers, switches for fast data processing)
- High-performance computing (HPC) (AI/ML workloads, scientific simulations)
- Embedded systems (industrial automation, medical devices requiring reliability)
It offers 8Gb density, 2666Mbps speed, and operates at 1.2V, making it suitable for power-efficient, high-bandwidth applications.
Package
Frequently Asked Questions
Q: What is the package type for the K4A8G085WB-BIRC?
A: It comes in an FBGA-78 (Fine-pitch Ball Grid Array) package, designed for space-saving PCB mounting.
Q: Is this component a DRAM memory chip?
A: Yes, it is a Samsung DDR4 SDRAM, suitable for high-speed data processing in computing and embedded systems.
Q: What is the memory density of this part?
A: The part number suggests 8Gb density, ideal for applications requiring moderate capacity with low power consumption.
Q: Can this chip be used in industrial temperature ranges?
A: The provided parameters do not specify temperature range; verify the grade before use in harsh environments.
Q: Does it support ECC (Error Correction Code)?
A: Standard DDR4 SDRAMs like this typically do not integrate ECC; confirm with datasheet for specific features.
Q: Are lead-free and RoHS compliance confirmed?
A: RoHS status is not provided; check the manufacturer’s latest documentation for environmental compliance.
Q: What is the typical voltage requirement?
A: DDR4 devices generally operate at 1.2V, but exact specifications should be verified from Samsung’s official datasheet.
Q: Is this part in active production?
A: Lifecycle status is not listed; contact distributor or manufacturer for current availability and lifecycle status.
