K4ABG085WA-MCWE

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K4ABG085WA-MCWE

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32Gbit 1.2V 1.6GHz DDR4 SDRAM FBGA-78 Memory (ICs) RoHS

365 Tage Qualitätsgarantie

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Spezifikationen

Attribut Wert
Packaging FBGA-78
Clock Frequency 1.6GHz
Memory Format DDR4 SDRAM
Memory Size 32Gbit
Operating Temperature 0℃~+85℃
Voltage - Supply 1.2V

Übersicht

Description

The K4ABG085WA-MCWE is a component from Samsung's LPDDR4X DRAM lineup, designed for high-performance, power-efficient applications such as smartphones, tablets, and other mobile devices. LPDDR4X stands for Low Power Double Data Rate 4X, which is a type of RAM that offers improvements in speed and power efficiency compared to its predecessors.
Key features of the K4ABG085WA-MCWE include a lower operating voltage, typically around 0.6V for the I/O pins, which helps to reduce power consumption and extend battery life in portable devices. This module can deliver high data transfer speeds, up to 4266 MT/s (megatransfers per second), making it suitable for handling demanding applications and multitasking with ease.
Additionally, the K4ABG085WA-MCWE is compact, supporting the trend of slimmer and lighter devices without sacrificing performance. Its efficient design and powerful capabilities enable manufacturers to enhance the user experience through faster app loading, improved graphics performance, and smoother overall operation in mobile environments.

Equivalent

The K4ABG085WA-MCWE is a mobile LPDDR4X DRAM chip by Samsung. Equivalent products include:
1. SK Hynix's H9HKNNNBRUMU-LC
2. Micron's MT53E512M32D2DS-046
3. Nanya's NT6AN1024F32AV
These products offer similar specifications in terms of speed, power efficiency, and capacity for mobile and embedded applications. Always check compatibility with specific design requirements when considering alternatives.

Features

The K4ABG085WA-MCWE is a memory module, likely a DRAM product, from Samsung's portfolio. Here are its key features:
1. Capacity: Typically, modules like the K4ABG085WA-MCWE provide a substantial amount of memory capacity, aiding in efficient data processing.

2. Performance: Designed for high-speed performance, it supports fast data transfer rates, which are crucial for applications requiring quick data access.
3. Power Efficiency: Samsung's memory solutions often emphasize low power consumption, which is essential for battery-powered devices and reducing overall energy costs in data centers.
4. Reliability: Samsung is known for producing durable and reliable memory components, which are tested to meet strict quality standards.
5. Compatibility: It is compatible with a variety of systems and platforms, offering versatility in deployment.
6. Applications: Suitable for use in consumer electronics, computing, and data storage solutions, among other applications.
These features make the K4ABG085WA-MCWE a robust choice for systems requiring efficient and reliable memory solutions.

Pinout

The K4ABG085WA-MCWE is a part number for a memory chip, specifically a type of LPDDR4X DRAM manufactured by Samsung. This component typically features a ball grid array (BGA) package, and in this case, it has a 200-ball count. The primary function of this memory chip is to provide high-speed, low-power volatile storage for devices such as smartphones, tablets, and other portable electronics. The LPDDR4X technology it employs is designed for enhanced performance and power efficiency compared to previous generations.

Manufacturer

The K4ABG085WA-MCWE is a product manufactured by Samsung Electronics. Samsung Electronics is a South Korean multinational electronics company and a major subsidiary of the Samsung Group. It is one of the world's largest manufacturers of electronic devices and specializes in the production of a wide range of consumer and industrial electronics, including semiconductors, memory chips, integrated systems, mobile phones, and home appliances. Samsung is recognized globally for its innovation and technological advancements, consistently ranking as a leader in the tech industry.

Application

The K4ABG085WA-MCWE is a multi-chip package often utilized in mobile and embedded applications due to its compact design and efficient performance. It is typically employed in smartphones, tablets, and IoT devices where space is at a premium and power efficiency is crucial. Its integration capabilities make it suitable for use in portable electronics, providing robust memory solutions for applications requiring high-speed data processing and storage. Additionally, it may be used in automotive infotainment systems and wearables, where reliable and quick access to data is essential. Overall, it supports applications that demand high performance, low power consumption, and compact form factors.

Package

The K4ABG085WA-MCWE is a memory chip package from Samsung. It typically comes in a BGA (Ball Grid Array) package type, which is compact and suitable for high-density applications. This configuration optimizes electrical performance and thermal management, making it ideal for mobile and embedded devices. For specific details, refer to Samsung's official datasheet or product documentation.

Frequently Asked Questions


Q: What is the memory density of the K4ABG085WA-MCWE?
A: The device has a memory density of 32Gbit, making it suitable for high-capacity server and data center applications.


Q: What is the operating voltage for this DDR4 SDRAM?
A: It operates at a standard DDR4 voltage supply of 1.2V, ensuring low power consumption.


Q: What is the maximum clock frequency supported?
A: The component supports a clock frequency of 1.6GHz, corresponding to DDR4-3200 data rates.


Q: What is the operating temperature range of this memory?
A: The device operates within a commercial temperature range of 0°C to +85°C.


Q: What package type does this memory use?
A: It comes in an FBGA-78 package, which is a standard ball-grid array footprint for DDR4 modules.


Q: Is this memory compatible with automatic soldering processes?
A: Yes, the FBGA-78 packaging is designed for surface-mount technology, supporting reflow soldering.


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