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K4B1G1646I-BYMA
+Stückliste1.35V 1Gbit DDR3 SDRAM BGA Memory (ICs) RoHS
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HerstellerSamsung
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Herstellerteil #K4B1G1646I-BYMA
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Auf Lager12087
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Packaging | BGA |
| Memory Format | DDR3 SDRAM |
| Memory Size | 1Gbit |
| Operating Temperature | 0℃~+85℃ |
| Voltage - Supply | 1.35V |
Übersicht
Description
- Capacity: 1Gb (organized as 128M x 8 bits).
- Speed: 800–1600 Mbps/pin (DDR3-800 to DDR3-1600).
- Voltage: 1.5V (standard DDR3).
- Package: 78-ball FBGA (Fine-pitch Ball Grid Array).
- Applications: Consumer electronics, networking, embedded systems.
It supports auto-refresh/self-refresh and 8 internal banks for efficient data handling. The "-BYMA" suffix denotes speed/timing (likely DDR3-1600, CL=11).
For exact specs, refer to the Samsung datasheet (K4B1G1646I).
Equivalent
- Micron: MT41J128M16HA-125:E
- Samsung: K4B1G1646E-BCMA
- Hynix: H5TQ1G63BFR-H9C
These chips offer similar specifications (1Gb, DDR3, 16-bit bus). Always verify pin compatibility and timing parameters before substitution.
Features
- Density: 1Gb (64M x 16)
- Voltage: 1.35V (DDR3L), compatible with 1.5V (DDR3)
- Speed: 800–1600 Mbps (supports various clock frequencies)
- Organization: 8 banks, 16-bit I/O
- CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11
- Package: 78-ball FBGA
- Refresh: Auto-refresh & self-refresh
- Operating Temp: Industrial (-40°C to +85°C)
- Low Power: Supports partial array self-refresh (PASR)
Designed for embedded systems, networking, and industrial applications, it offers high-speed, low-power DDR3L performance.
Pinout
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 16-bit data bus (DQ0-DQ15).
- 13-bit address bus (A0-A12).
- Bank address (BA0-BA2) for 8 internal banks.
- Control signals (RAS#, CAS#, WE#, CS#, CKE, ODT).
- Clock inputs (CK, CK#).
- 1.5V operating voltage (VDD/VDDQ).
It supports DDR3-800/1066/1333 speeds with auto-refresh and self-refresh modes. Used in PCs, networking, and embedded systems for high-speed memory access.
Application
- Consumer Electronics: Smart TVs, set-top boxes, gaming consoles.
- Computing: Laptops, desktops, embedded systems.
- Networking: Routers, switches, communication equipment.
- Industrial: Automation, control systems, medical devices.
- Automotive: Infotainment, ADAS (if qualified for extended temp ranges).
It offers low power consumption, high speed (up to 1866 Mbps), and reliable performance, making it suitable for memory-intensive applications.
Frequently Asked Questions
Q: Is this DDR3 SDRAM device compatible with 1.5V standard DDR3?
A: No, it is a 1.35V DDR3L (Low Voltage) version, optimized for power saving and not backward compatible with 1.5V standard DDR3 slots.
Q: What is the memory density and organization of the K4B1G1646I-BYMA?
A: It has a 1Gbit memory size with a x16 organization, suitable for applications requiring 64MB density per chip.
Q: What is the operating temperature range for this component?
A: The commercial temperature range is 0°C to +85°C, making it suitable for consumer and industrial environments within these limits.
Q: Does this part require specific PCB layout considerations due to the BGA package?
A: Yes, the BGA package demands precise soldering profiles and controlled impedance traces for high-speed DDR3 signaling at 1.35V.
Q: Can this memory be used in mobile or low-power embedded systems?
A: Yes, with its 1.35V supply and DDR3L standard, it is ideal for low-power embedded systems, routers, and networking equipment.
Q: What is the typical application for the 1Gbit x16 DDR3 SDRAM?
A: It is commonly used in set-top boxes, IP cameras, SSDs, and entry-level networking devices needing cost-effective, low-voltage memory.
