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K4F6E3S4HM-GFCL
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HerstellerSamsung
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Herstellerteil #K4F6E3S4HM-GFCL
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Auf Lager22035
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Manufacturer | Samsung |
| Package / Case | FBGA-200 |
Übersicht
Equivalent
- H5TC4G63AFR-PBA (SK Hynix)
- MT41K512M4DA-107 (Micron)
- IS43TR16256A-125KBL (ISSI)
Verify compatibility based on specs (speed, voltage, density, package). For exact replacements, consult Samsung's cross-reference or distributor datasheets.
Features
- Capacity: Likely 8GB or 16GB (varies by configuration).
- Speed: DDR4-2666MHz or higher (check exact specs).
- Voltage: Low power at 1.2V.
- CAS Latency: Optimized for performance (e.g., CL19).
- ECC Support: Error-correcting code for reliability.
- Form Factor: 288-pin DIMM for desktops/servers.
- Compatibility: Works with Intel/AMD platforms.
- Applications: Ideal for workstations, servers, and high-end PCs.
For precise details, refer to the manufacturer's datasheet.
Pinout
- Pin Count: 168-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Low-power DDR3 operation (1.2V core, 1.2V I/O).
- 8-bit data bus, supporting speeds up to 2133 Mbps.
- Features on-die termination (ODT) and programmable CAS latency.
- Designed for mobile/embedded applications (e.g., smartphones, tablets).
For exact pinout details, refer to the datasheet.
Manufacturer
This specific model is likely a LPDDR4X or DDR4 DRAM chip, designed for high-performance applications like smartphones, tablets, or servers. SK Hynix is known for its innovation in memory technology, including high-speed and low-power solutions.
For exact specifications, refer to SK Hynix's official datasheets or product documentation.