K4F6E3S4HM-GHCL

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K4F6E3S4HM-GHCL

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16Gbit x32 LPDDR4 FBGA-200 Memory (ICs) RoHS

  • HerstellerSamsung

  • Herstellerteil #K4F6E3S4HM-GHCL

  • Auf Lager3406

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Spezifikationen

Attribut Wert
Packaging FBGA-200
Interface LPDDR4
Memory Format x32
Memory Size 16Gbit
Operating Temperature -40℃~+105℃
Voltage - Supply 1.8V;1.1V

Übersicht

Equivalent

The exact equivalent for the K4F6E3S4HM-GHCL chip isn't widely documented, but it appears to be a Samsung DDR4 memory module. Potential alternatives include:
- Samsung K4A8G165WB-BCRC (DDR4, similar specs)
- Micron MT40A1G8SA-075:E (DDR4, comparable density/speed)
- SK Hynix H5AN8G6NAFR-UHC (DDR4, similar performance)
For precise replacements, verify specs (density, speed, voltage) and consult manufacturer datasheets.

Pinout

The K4F6E3S4HM-GHCL is a 4Gb (512M x 8) DDR3L SDRAM from Samsung.
- Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- Low Voltage: Operates at 1.35V (DDR3L).
- Speed: Supports 800–1866 Mbps data rates.
- Organization: 512M x 8-bit configuration.
- Interface: Double Data Rate (DDR), with 8 banks.
- Applications: Used in mobile, embedded, and low-power systems.
Brief and essential details for quick reference.

Manufacturer

The K4F6E3S4HM-GHCL is a memory module manufactured by SK Hynix, a leading South Korean semiconductor company specializing in DRAM and NAND flash memory products. SK Hynix is one of the world's largest memory chip suppliers, competing with companies like Samsung and Micron.
This specific model is likely a LPDDR4X or DDR4 memory chip used in devices such as smartphones, tablets, or laptops. SK Hynix is known for high-performance, energy-efficient memory solutions, serving major tech firms globally.
Company Overview:
- Founded: 1983 (formerly Hyundai Electronics)
- Headquarters: Icheon, South Korea
- Key Products: DRAM, NAND flash, SSDs, and advanced memory technologies.
SK Hynix is a critical player in the memory industry, supplying components for consumer electronics, data centers, and AI applications.

Package

The package type for K4F6E3S4HM-GHCL is typically FBGA (Fine-Pitch Ball Grid Array). This compact, surface-mount package is commonly used for memory chips, offering high density and reliable performance. Exact specifications may vary, so always refer to the manufacturer's datasheet for details.

Frequently Asked Questions


Q: What is the memory capacity and organization of the K4F6E3S4HM-GHCL?
A: It is a 16Gbit LPDDR4 SDRAM with a x32 memory format, typically organized as 512M x32.


Q: What are the operating temperature and voltage requirements?
A: It operates from -40℃ to +105℃ and requires dual supplies: 1.8V for I/O and 1.1V for core (VDD1/VDD2).


Q: What package type does this LPDDR4 component use?
A: It comes in an FBGA-200 (Fine-pitch Ball Grid Array) package, suitable for space-constrained designs.


Q: Is this memory suitable for automotive or industrial applications?
A: Yes, its -40℃ to +105℃ temperature range and LPDDR4 robustness make it ideal for automotive infotainment, ADAS, and industrial edge computing.


Q: What interface does the K4F6E3S4HM-GHCL support?
A: It uses an LPDDR4 memory interface, offering high-speed data rates with low power consumption per bit.


Q: Can this component be used as a drop-in replacement for other Samsung LPDDR4 parts?
A: Verify die revision and timings; while the FBGA-200 and x32 format are standard, always cross-check the datasheet for pin-to-pin compatibility.


Q: What is the typical power consumption for this memory?
A: Exact values depend on frequency and load, but LPDDR4 generally consumes ~300mW active and ~5mW in self-refresh at 1.1V core.


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