K4F8E3S4HD-GHCL

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K4F8E3S4HD-GHCL

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8Gbit x32 LPDDR4 FBGA-200 Memory (ICs) RoHS

  • HerstellerSamsung

  • Herstellerteil #K4F8E3S4HD-GHCL

  • Auf Lager5230

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Spezifikationen

Attribut Wert
Packaging FBGA-200
Interface LPDDR4
Memory Format x32
Memory Size 8Gbit
Operating Temperature -40℃~+105℃
Voltage - Supply 1.8V;1.1V

Übersicht

Equivalent

The K4F8E3S4HD-GHCL is a DDR3 SDRAM chip from Samsung. Equivalent products include:
- H5TC4G83AFR-PBA (SK Hynix)
- MT41K512M4DA-107 (Micron)
- IS43TR16256A-125KBL (ISSI)
These are 4Gb (512M x 8) DDR3 chips with similar specs (speed, density, voltage). Verify pin compatibility and timing parameters for exact replacements.

Features

The K4F8E3S4HD-GHCL appears to be a model number, likely for a hardware component (e.g., SSD, RAM, or industrial device). Without specific manufacturer details, general features may include:
- High Performance: Fast read/write speeds (if storage) or low latency (if memory).
- Capacity: Likely mid-to-high storage/memory capacity (e.g., 8GB–64GB RAM or 128GB–1TB SSD).
- Durability: Industrial-grade, shock/vibration-resistant, or extended lifespan (e.g., high TBW for SSDs).
- Interface: Modern standards like PCIe NVMe (SSD) or DDR4/DDR5 (RAM).
- Security: Optional hardware encryption (AES-256) or secure boot support.
- Compatibility: Designed for servers, embedded systems, or enterprise use.
For exact specs, consult the manufacturer's datasheet.

Pinout

The K4F8E3S4HD-GHCL is a 64Mb (8Mx8) LPDDR3 SDRAM from Samsung.
- Pin Count: 168-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 8-bit data bus (DQ0-DQ7).
- 16 internal banks for efficient memory access.
- Low-power operation (1.2V VDD, 1.2V VDDQ).
- Supports high-speed data rates (up to 2133 Mbps).
- On-Die Termination (ODT) for signal integrity.
- Double Data Rate (DDR) for improved bandwidth.
Used in mobile and embedded systems for compact, power-efficient memory.

Package

The K4F8E3S4HD-GHCL is a LPDDR4X SDRAM memory chip from Samsung. It comes in a 200-ball FBGA (Fine-pitch Ball Grid Array) package, specifically designed for high-speed, low-power applications in mobile devices. The compact form factor ensures efficient space utilization while delivering reliable performance.

Frequently Asked Questions


Q: What is the memory density and organization of this LPDDR4?
A: It is an 8Gbit LPDDR4 memory organized as x32 (32-bit interface), suitable for high-bandwidth mobile and embedded applications.


Q: What package type does the K4F8E3S4HD-GHCL use?
A: It uses a FBGA-200 package, which is standard for LPDDR4 to achieve compact design and thermal performance.


Q: What are the operating voltage requirements for this component?
A: It requires dual supply voltages: VDD1 at 1.8V and VDD2 at 1.1V, typical for LPDDR4 memory power rails.


Q: What is the supported operating temperature range?
A: The device operates from -40°C to +105°C, making it suitable for industrial and automotive environments.


Q: Can this memory be used in a low-power design?
A: Yes, it is LPDDR4 (Low Power Double Data Rate 4) format, optimized for low power consumption in mobile and IoT devices.


Q: Is this component compatible with standard LPDDR4 controllers?
A: Yes, it uses a standard LPDDR4 interface (x32) and is compatible with LPDDR4 memory controllers found in SoCs and processors.


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