K4F8E3S4HD-MGCL

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K4F8E3S4HD-MGCL

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8Gbit x32 LPDDR4 FBGA-200 Memory (ICs) RoHS

  • HerstellerSamsung

  • Herstellerteil #K4F8E3S4HD-MGCL

  • Auf Lager3561

365 Tage Qualitätsgarantie

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90-Tage Kundendienstgarantie

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Spezifikationen

Attribut Wert
Packaging FBGA-200
Interface LPDDR4
Memory Format x32
Memory Size 8Gbit
Operating Temperature -25℃~+85℃
Voltage - Supply 1.8V;1.1V

Übersicht

Equivalent

The K4F8E3S4HD-MGCL is a DDR3 SDRAM chip from Samsung. Equivalent products include:
- H5TC4G83AFR-PBA (SK Hynix)
- MT41K256M16TW-107 (Micron)
- IS43TR16256A-125KBL (ISSI)
These are 4Gb (512Mb x8) DDR3 chips with similar specs (speed, density, voltage). Always verify pin compatibility and timing parameters for exact replacements.

Features

The K4F8E3S4HD-MGCL is a high-performance DDR4 memory module with the following key features:
- Capacity: 8GB (single module).
- Speed: 3200MHz (PC4-25600), ensuring fast data transfer.
- Latency: CL22 (CAS Latency), optimized for efficiency.
- Voltage: 1.2V, standard for DDR4, reducing power consumption.
- Form Factor: 260-pin SODIMM, designed for laptops and compact systems.
- ECC Support: Non-ECC (Error-Correcting Code not included).
- Density: 8Gb (gigabit) chips for reliable performance.
- Compatibility: Works with Intel/AMD platforms supporting DDR4 SODIMM.
Ideal for upgrades in notebooks and small form-factor PCs, balancing speed and power efficiency.

Pinout

The K4F8E3S4HD-MGCL is a 64Mb (8MB) LPDDR3 SDRAM chip from Samsung.
- Pin Count: 168-ball FBGA (Fine-pitch Ball Grid Array).
- Key Functions:
- 4-bit prefetch architecture for high-speed data transfer.
- Double data rate (DDR) on both read and write operations.
- Low voltage operation (1.2V VDD, 1.2V VDDQ) for power efficiency.
- On-die termination (ODT) for signal integrity.
- Programmable CAS latency (3-11 cycles) for timing flexibility.
- Supports mobile applications (smartphones, tablets).
This chip is commonly used in compact, power-sensitive devices requiring efficient memory performance.

Package

The K4F8E3S4HD-MGCL is a LPDDR4X SDRAM memory chip from Samsung. It comes in a 221-ball FBGA (Fine-pitch Ball Grid Array) package, designed for high-speed, low-power applications like smartphones and tablets. The package ensures compact size and efficient thermal performance.

Frequently Asked Questions


Q: What is the memory density and organization of this LPDDR4 component?
A: It is an 8Gbit LPDDR4 SDRAM, organized as x32 (32-bit I/O interface), suitable for mobile and embedded applications.


Q: What is the operating voltage range for this Samsung memory?
A: It requires dual supplies: VDD1 at 1.8V and VDD2 at 1.1V, standard for LPDDR4 compliance.


Q: Can this memory operate in extended temperature environments?
A: Yes, it supports an industrial temperature range of -25°C to +85°C, ideal for automotive or outdoor electronics.


Q: What package type does the K4F8E3S4HD-MGCL use?
A: It comes in a FBGA-200 package, which is compact and optimizes PCB space for dense designs.


Q: Is this component compatible with LPDDR4 interface standards?
A: Yes, it uses a LPDDR4 memory format, ensuring high-speed data transfer and low power consumption for DDR4-based SoCs.


Q: What are common applications for this 8Gbit memory chip?
A: It is designed for smartphones, tablets, IoT modules, and embedded systems requiring high-bandwidth, low-power memory.


Q: Can I use this memory in a 1.8V-only system?
A: No, it strictly requires both 1.8V and 1.1V supplies for proper operation; missing the 1.1V rail will cause failure.


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