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HerstellerSamsung Electronics
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Herstellerteil #K4T1G084QF-BCF7
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Auf Lager3602
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Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| EU Ro HS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Obsolete |
| Automotive | No |
| PPAP | No |
| Minimum Operating Supply Voltage (V) | 1.7 |
| Typical Operating Supply Voltage (V) | 1.8 |
| Maximum Operating Supply Voltage (V) | 1.9 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Temperature (°C) | 95 |
| Mounting Type | Surface Mount |
| Package Width | 7.5 |
| Package Length | 9.5 |
| PCB changed | 60 |
| Package / Case | BGA |
| Supplier Device Package | FBGA |
| Pin Count | 60 |
| Lead Shape | Ball |
| Chip Density (bit) | 1G |
| Number of Bits / Word (bit) | 8 |
| Data Bus Width (bit) | 8 |
| Maximum Clock Rate (M Hz) | 800 |
| DRAM Type | DDR2 SDRAM |
| Organization | 128Mx8 |
| Number of Internal Banks | 8 |
| Number of Words per Bank | 16M |
| Address Bus Width (bit) | 17 |
| Operating Current (m A) | 80 |
| Number of I / O Lines (bit) | 8 |
| Maximum Access Time (ns) | 0.4 |
| Interface Type | SSTL_1.8 |
Übersicht
Description
The chip is typically used in mobile devices, tablets, and other electronics that benefit from rapid data access and low power consumption. It supports data rates of up to 2400 MT/s (mega-transfers per second), enhancing overall system performance compared to previous memory generations.
Additionally, the K4T1G084QF-BCF7 incorporates advanced features like on-die termination and temperature monitoring, optimizing reliability and stability in various operating conditions. Overall, this DRAM solution is essential for modern computing needs, balancing performance with energy efficiency.
Equivalent
1. MT41K1G8 - Micron
2. H5TQ1G83 - Hyundai
3. K4B1G0846 - Samsung
4. IS43TR16640B - ISSI
Always verify compatibility based on specifications like speed, voltage, and timing before substitution.
Features
1. Density: 1GB capacity, suitable for various computing tasks.
2. Organization: 8-bit wide data bus, allowing efficient data transfer.
3. Speed: Operates at speeds of 1066 MT/s, providing fast data access.
4. Voltage: Requires a low operating voltage of 1.5V, promoting energy efficiency.
5. Package: Comes in a compact FBGA (Fine Ball Grid Array) package, ideal for space-constrained designs.
6. Latency: Offers low latency, enhancing overall system responsiveness.
7. Compatibility: Designed to be compatible with a wide range of devices, including laptops, desktops, and embedded systems.
This combination of features makes the K4T1G084QF-BCF7 suitable for applications requiring reliable and efficient memory solutions.
Pinout
The chip features a double data rate (DDR) architecture, allowing it to transfer data on both the rising and falling edges of the clock signal, effectively doubling the data rate. Its organization is typically 8 banks of 8 bits each, facilitating efficient memory operation and management. The K4T1G084QF-BCF7 is commonly used in consumer electronics and embedded systems, where high-speed memory access is critical.
Manufacturer
Specifically, the K4T1G084QF-BCF7 is a type of DRAM (Dynamic Random Access Memory), used primarily in mobile devices, tablets, and other electronics. As one of the leading companies in the semiconductor industry, Samsung is known for producing a wide range of memory products, including NAND flash and DRAM chips, which are critical components in modern computing and electronic devices.
Samsung Electronics plays a vital role in advancing technology, investing heavily in research and development to maintain its competitive edge. The company is recognized for its innovation, quality, and wide product portfolio, making it a key player in both the consumer electronics and semiconductor markets.
Application
Package
Frequently Asked Questions
Q: What is the memory density and organization of the K4T1G084QF-BCF7?
A: It has a 1Gbit density organized as 128M words x 8 bits, with an 8-bit data bus width and 8 internal banks.
Q: What is the maximum clock rate and access time of this DDR2 SDRAM?
A: It supports a maximum clock rate of 800 MHz and has a maximum access time of 0.4 ns, typical for DDR2-800 operation.
Q: What are the supply voltage requirements for this component?
A: It operates at a typical supply voltage of 1.8V, with a range from 1.7V to 1.9V, and uses SSTL_1.8 interface signaling.
Q: What is the operating temperature range and current consumption?
A: It operates from 0°C to 95°C, with a typical operating current of 80 mA.
Q: Is this component RoHS compliant and suitable for automotive applications?
A: Yes, it is EU RoHS compliant. However, it is not qualified for automotive use (No PPAP) and is marked as Obsolete.
Q: What is the package type and pin configuration?
A: It comes in a 60-pin FBGA package (BGA) with ball leads, measuring 9.5 mm x 7.5 mm, and is surface mount.
