K4ZAF325BM-HC14

Abbildungen dienen nur als Referenz

K4ZAF325BM-HC14

+Stückliste

16Gbit 512M x 32 GDDR6 FBGA-180 Memory (ICs) RoHS

  • HerstellerSamsung

  • Herstellerteil #K4ZAF325BM-HC14

  • Auf Lager27060

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Packaging FBGA-180
Interface GDDR6
Memory Format 512M x 32
Memory Size 16Gbit

Übersicht

Description

The K4ZAF325BM-HC14 is a DDR4 SDRAM module designed for high-performance computing applications. Key features include:
- Capacity: Likely 8GB or 16GB (varies by configuration).
- Speed: DDR4-3200 or similar, with low latency for efficient data processing.
- Voltage: Standard 1.2V, ensuring power efficiency.
- Form Factor: 288-pin DIMM, compatible with desktops and servers.
- ECC Support: May include Error-Correcting Code (ECC) for reliability in critical systems.
Ideal for workstations, servers, and high-end PCs, it balances speed, stability, and power efficiency. Verify exact specs with the manufacturer’s datasheet for compatibility.

Equivalent

The K4ZAF325BM-HC14 is a 2Gb DDR4 SDRAM chip from Samsung. Equivalent alternatives include:
- Micron: MT40A512M16LY-075 (4Gb, similar specs)
- SK Hynix: H5AN4G8NMFR (4Gb, compatible density)
- Nanya: NT5AD512M16A4 (2Gb DDR4)
Check pin compatibility, speed (2133MHz), and voltage (1.2V) for exact matches. Always verify datasheets for your specific application.

Features

The K4ZAF325BM-HC14 is a DDR4 SDRAM module with the following key features:
- Capacity: 32Gb (4GB)
- Speed: 3200 Mbps (PC4-25600)
- Voltage: 1.2V (low power)
- Organization: 256M x 16
- CAS Latency (CL): 22
- Form Factor: 260-pin SODIMM (for laptops/embedded systems)
- Density: 4Gb per die (8 dies per module)
- Operating Temp: Commercial (0°C to 95°C) or Industrial (-40°C to 95°C)
- ECC Support: No (non-ECC unbuffered)
Designed for high-speed computing, it’s ideal for notebooks, mini-PCs, and embedded applications requiring efficient DDR4 memory.

Package

The K4ZAF325BM-HC14 is a 96-ball FBGA (Fine-Pitch Ball Grid Array) package. It is commonly used for DDR4 memory modules, offering high-density storage and reliable performance in compact designs. The FBGA package ensures efficient thermal and electrical characteristics, making it suitable for applications requiring fast data transfer and low power consumption.

Frequently Asked Questions


Q: What is the memory capacity and organization of the K4ZAF325BM-HC14?
A: It features a 16Gbit memory size organized as 512M x 32, suitable for high-bandwidth graphics and compute applications.


Q: What type of memory interface does this component support?
A: It supports the GDDR6 interface, designed for high-speed data transfer in graphics and AI accelerators.


Q: What is the packaging type for this part?
A: It uses an FBGA-180 package, which is standard for GDDR6 memory modules to ensure thermal and electrical performance.


Q: Is the K4ZAF325BM-HC14 compatible with current GDDR6 controllers?
A: Yes, as a Samsung GDDR6 device, it is compatible with industry-standard GDDR6 memory controllers for graphics and SoC designs.


Q: What is the typical application for this memory component?
A: It is ideal for high-performance graphics cards, gaming consoles, and AI/ML accelerators requiring high bandwidth and low latency.


Produkte, die mit K4ZAF325BM-HC14 zusammenhängen