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KMFN60012B-B214
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HerstellerSamsung
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Herstellerteil #KMFN60012B-B214
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Auf Lager14761
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Manufacturer | Samsung |
| Package / Case | SMD |
Übersicht
Description
- Voltage Rating: 60V
- Current Capacity: 120A (pulsed)
- Low On-Resistance (RDS(on)): Typically 1.2mΩ (at VGS=10V)
- Fast Switching: Optimized for efficiency in DC-DC converters, motor drives, and battery management systems.
- Package: TO-263 (D2PAK), ensuring good thermal performance.
Ideal for automotive, industrial, and consumer electronics, it offers robust performance in high-current, high-efficiency circuits. Always refer to the datasheet for detailed specifications and application guidelines.
Equivalent
- Samsung K9F1G08U0D (NAND Flash, similar specs)
- Micron MT29F1G08ABAEA (1Gb NAND Flash)
- Toshiba TC58NVG0S3HTA00 (1Gb SLC NAND)
Check datasheets for exact compatibility, as pinouts and timing may vary. Always verify with your supplier or manufacturer.
Features
- Capacity: 64Gb (8GB)
- Interface: ONFI 3.0 (Toggle 2.0 compatible)
- Speed: Up to 533Mbps (per data line)
- Voltage: 2.7V–3.6V (Vcc) / 1.7V–2.0V (VccQ)
- Endurance: High (3K P/E cycles)
- Temperature Range: Industrial (-40°C to +85°C)
- Package: 63-ball BGA (8mm x 12mm)
- ECC Requirement: BCH (up to 40-bit/1KB)
- Advanced Features: Partial programming, multi-plane operation, and cache mode
Designed for industrial and embedded applications, it offers fast data transfer and reliable performance.
Manufacturer
SK hynix is a global leader in memory chip production, specializing in DRAM, NAND flash, and other advanced semiconductor solutions. It is one of the top suppliers in the industry, competing with companies like Samsung and Micron. The company is known for high-performance memory products used in consumer electronics, data centers, and enterprise storage.
For detailed specifications, refer to SK hynix's official datasheets or product documentation.