MJD127T4

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MJD127T4

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TRANS DARL PNP 8A 100V DPAK

  • HerstellerOnsemi

  • Herstellerteil #MJD127T4

  • Paket TO-252

  • Auf Lager2600

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Spezifikationen

Attribut Wert
Package / Case Bulk
Part Status Obsolete
Transistor Type PNP - Darlington
Current - Collector(Ic)(Max) 8 A
Voltage - Collector Emitter Breakdown(Max) 100 V
Vce Saturation(Max) @ Ib Ic 4V @ 80mA, 8A
Current - Collector Cutoff(Max) 10µA
DC Current Gain(h FE)(Min) @ Ic Vce 1000 @ 4A, 4V
Power - Max 1.75 W
Frequency - Transition 4MHz
Mounting Type Surface Mount

Übersicht

Description

The MJD127T4 is a high-performance NPN bipolar junction transistor (BJT) designed for power amplification and switching applications. Key features include:
- High current capability (up to 12A collector current).
- High voltage tolerance (100V collector-emitter voltage).
- Low saturation voltage, improving efficiency in switching circuits.
- Fast switching speed, suitable for high-frequency applications.
Common uses include power supplies, motor control, and audio amplifiers. Its robust TO-264 package ensures effective heat dissipation.
For optimal performance, ensure proper heat sinking and adhere to datasheet specifications for current/voltage limits.

Equivalent

The MJD127T4 is a PNP Darlington transistor. Equivalent or similar products include:
- TIP125 (higher current rating)
- BDX34 (similar Darlington PNP)
- MJD122T4 (complementary NPN version)
- KSD1273 (alternative PNP Darlington)
Check datasheets for exact specs like voltage, current, and pin compatibility before substitution.

Features

The MJD127T4 is a PNP bipolar junction transistor (BJT) with the following key features:
- Type: PNP Darlington transistor
- Voltage Ratings:
- Collector-Emitter Voltage (*VCEO*): -100V
- Collector-Base Voltage (*VCBO*): -100V
- Emitter-Base Voltage (*VEBO*): -5V
- Current Ratings:
- Continuous Collector Current (*IC*): -2A
- Peak Collector Current (*ICM*): -4A
- Power Dissipation (*Ptot*): 20W (at 25°C)
- Gain (*hFE*): 1000 min (Darlington configuration)
- Package: TO-252 (DPAK), surface-mount
- Applications: High-current switching, motor control, relays, and power regulation.
Compact, efficient, and designed for medium-power applications requiring high gain.

Manufacturer

The MJD127T4 is a PNP bipolar transistor manufactured by ON Semiconductor, a leading global supplier of power management and semiconductor solutions.
ON Semiconductor specializes in energy-efficient technologies for automotive, industrial, and consumer applications. The company is known for producing high-performance discrete components, analog ICs, and power management devices.
The MJD127T4 is commonly used in power amplification and switching applications. ON Semiconductor's products are widely trusted for reliability and efficiency in electronic designs.

Application

The MJD127T4 is a PNP bipolar transistor commonly used in:
1. Switching Circuits – For controlling power in devices like relays and motors.
2. Amplification – In audio and signal processing applications.
3. Power Management – Voltage regulation and DC-DC converters.
4. Automotive Electronics – Engine control, lighting, and infotainment systems.
5. Consumer Electronics – Power supplies and battery-operated devices.
Its high current (2A) and voltage (100V) ratings make it suitable for medium-power applications.

Package

The MJD127T4 is a TO-252 (DPAK) surface-mount package. It is a compact, three-terminal package commonly used for power transistors and regulators, offering good thermal performance. The DPAK design includes a metal tab for heat dissipation, making it suitable for medium-power applications. Its dimensions are typically around 6.5mm x 6.1mm x 2.3mm.

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