MJD210T4G

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MJD210T4G

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TRANS PNP 25V 5A DPAK

  • HerstellerOnsemi

  • Herstellerteil #MJD210T4G

  • Paket TO-252-3

  • Auf Lager2194

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
Transistor Type PNP
Current - Collector(Ic)(Max) 5 A
Voltage - Collector Emitter Breakdown(Max) 25 V
Vce Saturation(Max) @ Ib Ic 1.8V @ 1A, 5A
Current - Collector Cutoff(Max) 100nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 45 @ 2A, 1V
Power - Max 1.4 W
Frequency - Transition 65MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

The MJD210T4G is an N-channel power MOSFET designed for high-efficiency switching applications. Key features include:
- Voltage Rating: 100V
- Current Capacity: 10A (continuous)
- Low On-Resistance (RDS(on)): 0.18Ω (max)
- Fast Switching: Optimized for high-speed performance
- Package: TO-252 (DPAK), surface-mountable
Ideal for DC-DC converters, motor control, and power management in automotive, industrial, and consumer electronics. Its low gate charge and robust thermal performance enhance efficiency in compact designs.
For detailed specs, refer to the datasheet from ON Semiconductor (now part of onsemi).

Equivalent

Equivalent products to the MJD210T4G (PNP transistor) include:
- TIP42C (Higher current rating)
- BD244C (Similar specs)
- 2SB1560 (Japanese equivalent)
- MJD212T4G (Complementary NPN pair)
Check datasheets for exact compatibility in your circuit.

Features

The MJD210T4G is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 85mΩ (max) @ VGS = -4.5V
- Fast Switching: Low gate charge (Qg = 8.5nC typical)
- Low Threshold Voltage: VGS(th) = -1V (typical)
- Power Dissipation: 2.5W
- Package: DPAK (TO-252) for efficient heat dissipation
- Applications: Power management, load switching, DC-DC converters
Compact, efficient, and suitable for low-voltage applications.

Pinout

The MJD210T4G is a PNP bipolar junction transistor (BJT) in a TO-252 (DPAK) package with 3 pins:
1. Pin 1 (Base): Controls the transistor's switching/amplification.
2. Pin 2 (Collector): Connects to the load; handles the main current.
3. Pin 3 (Emitter): Ground reference for current flow.
Key Features:
- Voltage Rating: 100V (VCEO).
- Current Rating: 2A (IC).
- Power Dissipation: 20W.
Applications: Power switching, amplification, and motor control.
Compact and efficient for surface-mount designs.

Manufacturer

The MJD210T4G is manufactured by ON Semiconductor (now known as onsemi after rebranding in 2021).
onsemi is a global semiconductor company specializing in power management, analog, and sensor technologies. It serves industries like automotive, industrial, and consumer electronics, focusing on energy-efficient solutions.
The MJD210T4G is a PNP bipolar transistor designed for switching and amplification applications.

Package

The MJD210T4G is a PNP bipolar junction transistor (BJT) in a TO-252-3 (DPAK) surface-mount package. It is designed for medium-power applications, offering high current and voltage ratings. The DPAK package provides efficient thermal performance and is commonly used in switching and amplification circuits. Key specs include a 100V collector-emitter voltage and 2A continuous collector current.

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