MJD44H11

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MJD44H11

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TRANS POWER NPN 8A 80V DPAK

  • HerstellerOnsemi

  • Herstellerteil #MJD44H11

  • Paket TO-252-3

  • Auf Lager4625

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Spezifikationen

Attribut Wert
Package / Case Tube
Part Status Obsolete
Transistor Type NPN
Current - Collector(Ic)(Max) 8 A
Voltage - Collector Emitter Breakdown(Max) 80 V
Vce Saturation(Max) @ Ib Ic 1V @ 400mA, 8A
Current - Collector Cutoff(Max) 1µA
DC Current Gain(h FE)(Min) @ Ic Vce 60 @ 2A, 1V
Power - Max 20 W
Frequency - Transition 85MHz
Mounting Type Surface Mount

Übersicht

Description

MJD44H11 is a high-performance NPN bipolar junction transistor (BJT) designed for power amplification and switching applications. Key features include:
- High Current Capacity: Supports collector currents up to 8A.
- Voltage Tolerance: Collector-emitter voltage (VCE) up to 100V.
- Low Saturation Voltage: Enhances efficiency in switching circuits.
- Robust Package: Typically housed in a TO-252 (DPAK) package for thermal management.
Commonly used in power supplies, motor control, and audio amplifiers, the MJD44H11 pairs well with complementary PNP transistors (e.g., MJD45H11) for push-pull configurations. Always refer to the datasheet for precise specifications and thermal guidelines.

Equivalent

Equivalent products to the MJD44H11 (PNP Darlington transistor) include:
- TIP125 (similar specs, widely available)
- BDW44 (close alternative)
- MJD45H11 (complementary NPN version)
- TIP42C (lower current but common substitute)
Check datasheets for exact compatibility in your circuit.

Features

The MJD44H11 is an NPN Darlington transistor with the following key features:
- High Current Gain (hFE): Typically 1000, making it suitable for low-power amplification and switching.
- Collector Current (IC): Up to 8A, handling moderate power loads.
- Collector-Emitter Voltage (VCEO): 80V, supporting medium-voltage applications.
- Power Dissipation (PD): 50W (with heatsink), ensuring thermal stability.
- Package: TO-252 (DPAK), compact and surface-mountable.
- Low Saturation Voltage: Improves efficiency in switching applications.
Common uses include motor drivers, relays, and power regulators. Its Darlington pair design provides high sensitivity for small input signals.

Manufacturer

The MJD44H11 is a PNP bipolar transistor manufactured by ON Semiconductor, a leading global supplier of power management and semiconductor solutions.
ON Semiconductor (now known as onsemi) is a Fortune 500 company specializing in energy-efficient technologies, including power management, analog, and sensor solutions for automotive, industrial, and consumer markets. Known for high-reliability components, it serves industries requiring robust electronic systems.
The MJD44H11 is commonly used in power amplification and switching applications.

Application

The MJD44H11 is a PNP bipolar junction transistor (BJT) commonly used in:
1. Power Switching – For controlling high-current loads in circuits.
2. Amplification – In audio and signal amplification stages.
3. Motor Control – Driving DC motors or solenoids.
4. Voltage Regulation – As a pass transistor in linear regulators.
5. Industrial & Automotive Systems – Reliable for harsh environments due to its rugged design.
Key features include high current (8A) and voltage (80V) handling, making it suitable for medium-power applications.

Package

The MJD44H11 is a power transistor typically available in a TO-252-3 (DPAK) surface-mount package. This package is compact, suitable for high-current applications, and features a thermal pad for efficient heat dissipation. It is commonly used in power management circuits.

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