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MJE15032G
+StücklisteTRANS NPN 250V 8A TO220
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HerstellerOnsemi
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Herstellerteil #MJE15032G
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Paket TO-220-3
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Auf Lager4316
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk,Tube |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 8 A |
| Voltage - Collector Emitter Breakdown(Max) | 250 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff(Max) | 10µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 10 @ 2A, 5V |
| Power - Max | 50 W |
| Frequency - Transition | 30MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Übersicht
Description
The MJE15032G is a high-power NPN bipolar junction transistor (BJT) commonly used in audio amplifiers and power supply circuits. Manufactured by ON Semiconductor, this transistor is designed to handle high voltage and current, making it suitable for applications requiring robust performance and reliability. Key specifications include a collector-emitter voltage (V_CEO) of 250V, a collector current (I_C) of 8A, and a power dissipation of 50W. It features a low saturation voltage and high gain bandwidth, ensuring efficient and consistent performance. The MJE15032G is housed in a TO-220 package, which provides effective heat dissipation, crucial for high-power applications. Its complementary PNP counterpart is the MJE15033G, and together they are often used in push-pull amplifier configurations. The device is lead-free and RoHS compliant, aligning with modern environmental standards. Overall, the MJE15032G is a versatile and durable component, ideal for various electronic circuits demanding high power and reliability.
Equivalent
The MJE15032G is an NPN bipolar junction transistor commonly used in audio amplifiers and power applications. Equivalent products include:
1. TIP31C
2. BD139
3. 2SC5200 (though the 2SC5200 has a higher power rating)
4. TIP41C
Ensure to check the specifications, such as maximum voltage, current, and power ratings, to confirm suitability for your specific application.
1. TIP31C
2. BD139
3. 2SC5200 (though the 2SC5200 has a higher power rating)
4. TIP41C
Ensure to check the specifications, such as maximum voltage, current, and power ratings, to confirm suitability for your specific application.
Features
The MJE15032G is a NPN bipolar junction transistor known for its high voltage and high current capabilities. Key features include:
1. Collector-Emitter Voltage: It can handle a maximum collector-emitter voltage (Vceo) of 250V, making it suitable for high voltage applications.
2. Collector Current: The transistor supports a continuous collector current (Ic) of up to 8A, allowing it to drive significant loads.
3. Power Dissipation: It has a power dissipation capacity of 50W, which aids in managing heat effectively during operation.
4. High Switching Speed: The MJE15032G is designed for fast switching applications, beneficial in audio amplifiers and power supplies.
5. Gain Bandwidth Product: It offers a gain bandwidth product (fT) of 30 MHz, providing good frequency response.
6. Complementary Pair: It pairs with the MJE15033G (PNP transistor) for complementary push-pull amplifier circuits.
7. TO-220 Package: Featured in a TO-220 package, it provides efficient heat dissipation and easy mounting.
8. RoHS Compliant: The "G" in its name indicates compliance with RoHS standards, ensuring it is free from hazardous substances.
These features make it a versatile choice for various electronic applications requiring robust performance.
1. Collector-Emitter Voltage: It can handle a maximum collector-emitter voltage (Vceo) of 250V, making it suitable for high voltage applications.
2. Collector Current: The transistor supports a continuous collector current (Ic) of up to 8A, allowing it to drive significant loads.
3. Power Dissipation: It has a power dissipation capacity of 50W, which aids in managing heat effectively during operation.
4. High Switching Speed: The MJE15032G is designed for fast switching applications, beneficial in audio amplifiers and power supplies.
5. Gain Bandwidth Product: It offers a gain bandwidth product (fT) of 30 MHz, providing good frequency response.
6. Complementary Pair: It pairs with the MJE15033G (PNP transistor) for complementary push-pull amplifier circuits.
7. TO-220 Package: Featured in a TO-220 package, it provides efficient heat dissipation and easy mounting.
8. RoHS Compliant: The "G" in its name indicates compliance with RoHS standards, ensuring it is free from hazardous substances.
These features make it a versatile choice for various electronic applications requiring robust performance.
Pinout
The MJE15032G is a NPN bipolar junction transistor (BJT) used for high-power applications. It comes in a TO-220 package and has three pins:
1. Collector (C): This pin is the primary path through which the current flows when the transistor is in the "on" state. It is connected to the load in most circuit configurations.
2. Base (B): The base pin controls the transistor's operation. A small current or voltage applied here will control the larger current flowing from the collector to the emitter.
3. Emitter (E): Current flows out through this pin. When the transistor is conducting, the emitter is the output for the current flowing through the collector.
The MJE15032G is typically used in high-voltage and high-speed switching applications, such as audio amplifiers and power supplies. Its high current gain and fast switching capabilities make it suitable for these demanding environments.
1. Collector (C): This pin is the primary path through which the current flows when the transistor is in the "on" state. It is connected to the load in most circuit configurations.
2. Base (B): The base pin controls the transistor's operation. A small current or voltage applied here will control the larger current flowing from the collector to the emitter.
3. Emitter (E): Current flows out through this pin. When the transistor is conducting, the emitter is the output for the current flowing through the collector.
The MJE15032G is typically used in high-voltage and high-speed switching applications, such as audio amplifiers and power supplies. Its high current gain and fast switching capabilities make it suitable for these demanding environments.
Manufacturer
The MJE15032G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is a semiconductor company that specializes in designing and manufacturing a broad range of electronic components. These components are used across various industries, including automotive, industrial, communications, consumer electronics, and computing. onsemi focuses on providing energy-efficient solutions and is known for its power and signal management, logic, discrete, and custom devices.
Application
The MJE15032G is a high-voltage, high-speed NPN bipolar junction transistor commonly used in audio amplifiers and power amplification circuits. Its robust construction allows it to handle high currents and voltages, making it suitable for applications in high-fidelity audio systems, such as driving loudspeakers or as outputs in audio power amplifiers. Additionally, its fast switching speeds make it ideal for use in switching power supplies and motor control circuits. The MJE15032G is also utilized in RF circuits and other applications requiring reliable performance under demanding conditions.
Package
The MJE15032G is a NPN bipolar junction transistor (BJT) primarily used for high-voltage, high-speed power switching. It is commonly housed in a TO-220 package, which features a plastic body with a metal tab for heat dissipation, three leads for electrical connections, and is designed for easy mounting onto a heat sink.
