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MJE253G
+StücklisteTRANS PNP 100V 4A TO126
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HerstellerOnsemi
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Herstellerteil #MJE253G
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Paket TO-225-3
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Auf Lager1900
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Bulk,Bulk |
| Part Status | Active |
| Transistor Type | PNP |
| Current - Collector(Ic)(Max) | 4 A |
| Voltage - Collector Emitter Breakdown(Max) | 100 V |
| Vce Saturation(Max) @ Ib Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 40 @ 200mA, 1V |
| Power - Max | 1.5 W |
| Frequency - Transition | 40MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
Übersicht
Description
The MJE253G is a versatile NPN bipolar junction transistor (BJT) commonly used in electronic circuits. It is designed for high-current applications and can handle up to 8A of collector current and 80V of collector-emitter voltage. This transistor is ideal for general-purpose amplification and switching operations due to its robust performance characteristics.
The MJE253G features a low saturation voltage, which enhances its efficiency in switching applications and minimizes power loss. It also offers a high current gain, making it suitable for driving loads in various electronic devices. The transistor is often used in power management solutions, motor control circuits, and audio amplifiers.
Encapsulated in a TO-220 package, the MJE253G provides efficient thermal dissipation, allowing it to operate effectively under high-power conditions. Its reliability and performance make it a popular choice among engineers and hobbyists alike for implementing energy-efficient and cost-effective electronic solutions. Proper heat sinking is advised during usage to maintain optimal performance and prevent overheating.
The MJE253G features a low saturation voltage, which enhances its efficiency in switching applications and minimizes power loss. It also offers a high current gain, making it suitable for driving loads in various electronic devices. The transistor is often used in power management solutions, motor control circuits, and audio amplifiers.
Encapsulated in a TO-220 package, the MJE253G provides efficient thermal dissipation, allowing it to operate effectively under high-power conditions. Its reliability and performance make it a popular choice among engineers and hobbyists alike for implementing energy-efficient and cost-effective electronic solutions. Proper heat sinking is advised during usage to maintain optimal performance and prevent overheating.
Equivalent
The MJE253G is a bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. Equivalent products include:
1. TIP42C
2. 2N5401
3. BD136
4. TIP32C
It's important to verify the specific electrical characteristics and pin configurations as they can vary slightly between manufacturers and models.
1. TIP42C
2. 2N5401
3. BD136
4. TIP32C
It's important to verify the specific electrical characteristics and pin configurations as they can vary slightly between manufacturers and models.
Features
The MJE253G is an NPN bipolar junction transistor designed for general-purpose amplifier and switching applications. Key features include:
1. Polarity: NPN
2. Collector-Emitter Voltage (Vceo): 80V
3. Collector-Base Voltage (Vcbo): 100V
4. Emitter-Base Voltage (Vebo): 5V
5. Collector Current (Ic): 8A
6. Power Dissipation: 40W
7. Transition Frequency (ft): 3 MHz
8. DC Current Gain (hFE): 25 - 100
9. Package Type: TO-220
10. Operating Temperature Range: -65°C to 150°C
The MJE253G is well-suited for medium power applications in audio amplification and various electronic circuits. It provides robust performance across a range of operating conditions and can handle relatively high current loads. The TO-220 package ensures good thermal management, making it suitable for applications where efficient heat dissipation is necessary.
1. Polarity: NPN
2. Collector-Emitter Voltage (Vceo): 80V
3. Collector-Base Voltage (Vcbo): 100V
4. Emitter-Base Voltage (Vebo): 5V
5. Collector Current (Ic): 8A
6. Power Dissipation: 40W
7. Transition Frequency (ft): 3 MHz
8. DC Current Gain (hFE): 25 - 100
9. Package Type: TO-220
10. Operating Temperature Range: -65°C to 150°C
The MJE253G is well-suited for medium power applications in audio amplification and various electronic circuits. It provides robust performance across a range of operating conditions and can handle relatively high current loads. The TO-220 package ensures good thermal management, making it suitable for applications where efficient heat dissipation is necessary.
Pinout
The MJE253G is a bipolar junction transistor (BJT) designed for amplification and switching applications. It typically comes in a TO-220 package. The pin count and functions are as follows:
1. Pin 1: Base (B) - This pin is responsible for controlling the transistor's operation. By varying the base current, you can modulate the collector-emitter current.
2. Pin 2: Collector (C) - This pin is the main current-carrying terminal. The current flows from collector to emitter when the transistor is in the active region.
3. Pin 3: Emitter (E) - This pin is the terminal through which the current leaves the transistor. It is common to the load in typical amplifier configurations.
The MJE253G is often used for medium power applications and can handle moderate levels of current and voltage. It is important to refer to the datasheet for specific electrical characteristics and ratings to ensure proper implementation in circuits.
1. Pin 1: Base (B) - This pin is responsible for controlling the transistor's operation. By varying the base current, you can modulate the collector-emitter current.
2. Pin 2: Collector (C) - This pin is the main current-carrying terminal. The current flows from collector to emitter when the transistor is in the active region.
3. Pin 3: Emitter (E) - This pin is the terminal through which the current leaves the transistor. It is common to the load in typical amplifier configurations.
The MJE253G is often used for medium power applications and can handle moderate levels of current and voltage. It is important to refer to the datasheet for specific electrical characteristics and ratings to ensure proper implementation in circuits.
Manufacturer
The MJE253G is a transistor manufactured by ON Semiconductor, which is now known as onsemi. Onsemi is a leading semiconductor company that focuses on intelligent power and sensing technologies. The company provides a wide range of products and solutions for various applications, including automotive, industrial, and communications infrastructure. Onsemi is recognized for its innovation in energy-efficient electronics, helping to reduce energy consumption and improve performance in electronic systems.
Application
The MJE253G is a PNP bipolar junction transistor commonly used in amplification and switching applications. Due to its ability to handle moderate power levels and its relatively high current gain, it's suitable for audio amplifier circuits, signal amplification, and low-frequency power switching. It is also used in various electronic circuits like power supplies, motor drivers, and relay drivers. The MJE253G can be found in consumer electronics, industrial controls, and automotive applications, where reliable performance is needed for driving or amplifying signals. Its robust design makes it suitable for various general-purpose amplification tasks.
Package
The MJE253G is a bipolar junction transistor (BJT) that comes in a TO-225 package type.
