MMIX1T660N04T4

Abbildungen dienen nur als Referenz

MMIX1T660N04T4

+Stückliste

MOSFET N-CH 40V 660A 24SMPD

  • HerstellerIXYS

  • Herstellerteil #MMIX1T660N04T4

  • Auf Lager6489

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier IXYS
Package / Case Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain(Id) @ 25°C 660A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 0.85mOhm @ 100A, 10V
Vgs(th)(Max) @ Id 4V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 860 nC @ 10 V
Vgs(Max) ±15V
Input Capacitance(Ciss)(Max) @ Vds 44000 pF @ 25 V
Power Dissipation (Max) 830W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 24-SMPD

Produkte, die mit MMIX1T660N04T4 zusammenhängen