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MMUN2113LT1G
+StücklisteTRANS PREBIAS PNP 50V SOT23-3
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HerstellerOnsemi
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Herstellerteil #MMUN2113LT1G
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Auf Lager2698
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Part Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistors Included | R1 and R2 |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (h FE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Power - Max | 246 mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Base Product Number | MMUN2113 |
Übersicht
Description
Students engage in critical analysis of contemporary global issues, enhancing their ability to think strategically about international policymaking. Through lectures, case studies, and simulations, participants develop skills in negotiation, communication, and analytical thinking. The course also emphasizes the importance of cultural awareness and ethical considerations in international affairs.
Overall, MMUN2113LT1G prepares students for careers in diplomacy, international law, and global advocacy, fostering a nuanced understanding of the complexities of global interactions.
Equivalent
Features
1. Multi-Channel Capability: Supports multiple communication channels, making it suitable for various applications.
2. Low Power Consumption: Optimized for energy efficiency, ensuring minimal power usage in operation.
3. Integrated Components: Combines several functions into a single chip, reducing the need for external components and saving board space.
4. High Frequency Operation: Capable of operating at elevated frequencies, enhancing performance in demanding environments.
5. Versatile Interface Options: Supports multiple protocols, which ensures compatibility with a wide range of devices.
6. Robust Performance: Designed to operate reliably under extreme conditions, ensuring longevity and stability in various applications.
7. Small Package Size: Compact design allows for easy integration into space-constrained applications.
These features make the MMUN2113LT1G suitable for applications in telecommunications, automotive, and industrial sectors.
Pinout
1. Gate (G): This pin controls the MOSFET's switching operation. A voltage applied here turns the device on or off.
2. Drain (D): This is the output pin where the load is connected. Current flows from the drain to the source when the device is on.
3. Source (S): This pin is typically connected to ground in low-side switching applications. Current flows out of the source when the MOSFET is activated.
The MMUN2113LT1G is designed for low-voltage applications and can handle a maximum continuous drain current of 3.7A, with a maximum drain-source voltage of 30V. It is widely used in switching applications and amplifier circuits.