MRF8S9102NR3

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MRF8S9102NR3

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FET RF 70V 920MHZ OM780-2

  • HerstellerNXP USA Inc.

  • Herstellerteil #MRF8S9102NR3

  • Paket OM-780

  • Auf Lager76

365 Tage Qualitätsgarantie

7*24 Stunden-Servicegarantie

90-Tage Kundendienstgarantie

Originalproduktgarantie

Spezifikationen

Attribut Wert
Supplier Flip Electronics,NXP USA Inc.
Package / Case Tape & Reel (TR),Tape & Reel (TR)
Part Status Obsolete
Transistor Type LDMOS
Frequency 920MHz
Gain 23.1dB
Voltage - Test 28 V
Current - Test 750 mA
Power - Output 28W
Voltage - Rated 70 V

Übersicht

Description

MRF8S9102NR3 is a high‑frequency RF power transistor (an N‑channel MOSFET) used as a power‑amplifier device in RF applications. It belongs to the MRF8S9xxx family and is typically provided in a RoHS‑compliant surface‑mount package. The exact electrical ratings (drain‑source voltage, drain current, gain, Ft, package type) vary by revision/vendor. For precise specs and recommended operating conditions, pull the official datasheet from the manufacturer or distributor. If you share the vendor or a link, I can summarize the key figures and typical applications.

Pinout

Pin count: 8 pins.
Function: GaAs RF transistor (microwave RF power amplifier device) in a ceramic package, with pins for gate, drain, source, substrate, and bias/bias-control connections. (Exact pinout varies by package; consult the datasheet for pin assignments.)

Manufacturer

- Manufacturer: Mitsubishi Electric Corporation.
- What kind of company: A Japanese multinational electronics and electrical equipment manufacturer that designs and produces semiconductors and a broad range of electrical/electronic products.

Application

MRF8S9102NR3 is a high‑power RF transistor used as the final power amplifier element. Common application areas include:
- RF PA modules for wireless infrastructure (base stations, wireless backhaul)
- Point-to-point microwave links
- ISM-band transmitters and front‑ends
- Radar and other RF transceiver front-ends
- Laboratory/test RF amplifier sources
Note: suitable where high linearity and gain at RF frequencies are required.

Package

Surface-mount ceramic RF transistor package (SMD). The exact style (leaded/leadless; flange variant) depends on the manufacturer—check the specific datasheet for MRF8S9102NR3.

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