MT41K512M8DA-107:P

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MT41K512M8DA-107:P

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IC DRAM 4GBIT PAR 78FBGA

  • HerstellerMicron Technology Inc.

  • Herstellerteil #MT41K512M8DA-107:P

  • Auf Lager1786

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Attribut Wert
Part Status Active
Base Product Number MT41K512M8
Digi Key Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 512M x 8
Memory Interface Parallel
Clock Frequency 933 MHz
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature 0°C ~ 95°C (TC)
Mounting Type Surface Mount
Package / Case 78-TFBGA
Supplier Device Package 78-FBGA (8x10.5)
Packaging Tray
Access Time 20 ns

Übersicht

Description

The MT41K512M8DA-107:P is a high-performance DRAM chip produced by Micron Technology. It is part of the DDR3 SDRAM family, offering efficient memory solutions suitable for a range of applications, including computing and embedded systems. This chip features a storage capacity of 4 Gb (gigabits), organized as 512M x 8 bits, and operates with a supply voltage of 1.5V, typical for DDR3 devices.
The "107:P" in the part number indicates specific attributes related to the speed grade and package type. The chip supports data rates up to 1866 MT/s (megatransfers per second), which is ideal for applications requiring quick data processing capabilities. The "FBGA" (Fine-pitch Ball Grid Array) package provides a compact form factor, enhancing thermal performance and reliability.
This DRAM ensures efficient power consumption with advanced features like auto-refresh and self-refresh. It is designed to be compatible with standard DDR3 interfaces, facilitating seamless integration into existing systems. Overall, the MT41K512M8DA-107:P is a versatile and robust choice for modern memory applications.

Equivalent

The MT41K512M8DA-107:P is a 4Gb DDR3L SDRAM chip from Micron. Equivalent products include:
1. Samsung K4B4G0846D - 4Gb DDR3L SDRAM.
2. Hynix H5TC4G63AFR - 4Gb DDR3L SDRAM.
3. Nanya NT5CB512M8DN - 4Gb DDR3L SDRAM.
4. Kingston D3L4G64 - 4Gb DDR3L SDRAM modules.
These alternatives typically share similar specifications in terms of capacity, speed, and voltage. Always check compatibility with specific requirements.

Features

The MT41K512M8DA-107:P is a DDR3L SDRAM component manufactured by Micron Technology. Key features include:
1. Density and Organization: It is organized as 512 Meg x 8 bits, offering a total density of 4Gb (gigabits).
2. Speed and Performance: Operates at speeds up to 1866 MT/s (million transfers per second), providing fast data transfer.
3. Voltage: Supports low voltage operation at 1.35V, which is more power-efficient, but it is also compatible with 1.5V operation.
4. Package: Available in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package, which offers efficient space usage and heat dissipation.
5. Data Rate and Latency: Features a timing of 107 cycles and offers various CAS latency options to optimize performance.
6. Reliability: Includes features like on-die termination and data masking for improved signal integrity and reliability.
7. Applications: Suitable for use in applications such as computing systems, networking devices, and consumer electronics where efficient memory performance is required.
These features make it a versatile choice for systems requiring moderate power consumption with high-speed data processing.

Pinout

The MT41K512M8DA-107:P is a DRAM chip from Micron's DDR3L series. It is an 8Gb (gigabit) memory component organized in a x8 configuration. This chip is typically used in applications requiring high-speed data transfer and efficient power use, such as computers, servers, and mobile devices.
The MT41K512M8DA-107:P comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package. The primary functions of the pins include:
1. Data I/O Pins (DQ): Handles the read and write data.
2. Address Pins (A0-A15): Used to select the memory addresses.
3. Bank Address Pins (BA0-BA2): Selects the bank to be activated.
4. Command Pins (RAS, CAS, WE): Row and column address strobe and write enable signals for controlling the access mode.
5. Clock (CK, CK#): Differential clock signals for synchronizing read/write operations.
6. Control Pins (CS#, CKE, ODT): Chip Select, Clock Enable, and On-Die Termination control.
7. Power and Ground Pins (VDD, VSS): Provide power supply and grounding.
This chip supports high-speed data rates up to 1866 MT/s and operates at a supply voltage of 1.35V.

Manufacturer

The MT41K512M8DA-107:P is a DRAM chip manufactured by Micron Technology, Inc. Micron is a leading American company in the semiconductor industry, specializing in memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is one of the largest manufacturers of dynamic random-access memory (DRAM), NAND flash memory, and other semiconductor devices. The company serves a broad range of markets, including computing, mobile, automotive, industrial, and networking, providing components that are integral to the functionality and performance of electronic devices. Micron is known for its innovation in memory technology and solutions that enhance data processing and storage capabilities.

Application

The MT41K512M8DA-107:P is a DRAM chip commonly used in applications requiring high-speed and high-density memory solutions. It is often utilized in:
1. Computing: Enhances performance in PCs, laptops, and servers by providing efficient memory management and fast data access.
2. Networking Equipment: Supports routers, switches, and other networking devices with large data handling and quick processing capabilities.
3. Consumer Electronics: Powers memory-intensive applications in gaming consoles, smart TVs, and high-end smartphones.
4. Embedded Systems: Used in industrial controls, automotive systems, and IoT devices for reliable and efficient memory operations.
5. Telecommunications: Supports infrastructure like base stations and data centers with robust memory solutions.

Package

The MT41K512M8DA-107:P is a DRAM chip packaged in a standard FBGA (Fine-Pitch Ball Grid Array) format. This package type is commonly used for memory components, providing a small footprint and efficient heat dissipation, suitable for high-density applications.

Frequently Asked Questions


Q: What is the memory density and organization of the MT41K512M8DA-107:P?
A: It is a 4Gbit DDR3L SDRAM organized as 512M x 8, optimized for high-density memory applications.


Q: What voltage range does this DDR3L component support?
A: It operates at 1.283V to 1.45V, compliant with DDR3L low-voltage standards for power efficiency.


Q: What is the maximum clock frequency and access time?
A: It supports a 933 MHz clock frequency with a 20 ns access time, enabling high-speed data transfers.


Q: What package type and mounting style does it use?
A: It comes in a 78-TFBGA package (78-FBGA 8x10.5mm) for surface mount assembly, suitable for compact designs.


Q: What is the operating temperature range for this memory?
A: The rated temperature range is 0°C to 95°C (TC), appropriate for commercial and industrial environments.


Q: Does this part support parallel or serial memory interface?
A: It uses a parallel memory interface, standard for SDRAM - DDR3L architectures.


Q: Is this component currently active and readily available?
A: Yes, its Part Status is Active, indicating ongoing production and supply chain support.


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