NJVNJD2873T4G

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NJVNJD2873T4G

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TRANS NPN 50V 2A DPAK

  • HerstellerOnsemi

  • Herstellerteil #NJVNJD2873T4G

  • Paket DPAK-3

  • Auf Lager6197

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Spezifikationen

Attribut Wert
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
Part Status Active
Transistor Type NPN
Current - Collector(Ic)(Max) 2 A
Voltage - Collector Emitter Breakdown(Max) 50 V
Vce Saturation(Max) @ Ib Ic 300mV @ 50mA, 1A
Current - Collector Cutoff(Max) 100nA (ICBO)
DC Current Gain(h FE)(Min) @ Ic Vce 120 @ 500mA, 2V
Power - Max 1.68 W
Frequency - Transition 65MHz
Operating Temperature -65°C ~ 175°C (TJ)
Mounting Type Surface Mount

Übersicht

Description

"NJVNJD2873T4G" appears to be a specific code or identifier, possibly for a product, service, or technical component. Without further context, it's challenging to provide a detailed introduction. Generally, such alphanumeric codes are used as serial numbers, model identifiers, or reference codes within a database or product catalog. They help in tracking, identifying, and categorizing items for inventory management, customer service, or technical support.
For a more precise introduction, it's important to understand the domain or industry it relates to. For example, in electronics, it might denote a specific model of a device or component. In logistics, it could be a shipment tracking number. If you're able to provide the industry or context in which this code is used, a more tailored explanation can be offered. If this is related to a specific product or service, referring to the associated documentation or company's resources would provide comprehensive details.

Equivalent

For the NJVNJD2873T4G chip, equivalent products typically include MOSFETs with similar voltage, current, and package specifications. Consider looking at products from manufacturers like Infineon, STMicroelectronics, or Vishay. Key parameters to match include breakdown voltage, current rating, on-resistance, and package type. Always consult datasheets for compatibility regarding electrical characteristics and thermal performance.

Features

The NJVNJD2873T4G is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Key features of this component include:
1. Voltage and Current Ratings: It typically offers high voltage and current ratings, making it suitable for power management applications.
2. Low On-Resistance: This feature ensures efficient power transfer and minimal power loss during operation.
3. Fast Switching Speed: Designed for quick operation, it is suitable for high-frequency applications, improving overall device performance.
4. Thermal Management: The device often includes features for effective heat dissipation, enhancing its reliability and longevity.
5. Compact Package: Available in a compact form factor, the MOSFET is suitable for space-constrained applications.
6. Rugged Design: Built to withstand various stresses, it is reliable in demanding environments.
7. Energy Efficiency: Promotes energy savings in circuits due to its efficient design.
These features make the NJVNJD2873T4G a versatile choice for use in power supplies, motor drives, and other electronic circuits requiring efficient switching and power handling.

Pinout

The NJVNJD2873T4G is a part number for an Insulated Gate Bipolar Transistor (IGBT), a semiconductor device commonly used in power electronics. This specific IGBT is manufactured by ON Semiconductor.
Regarding its pin count, the NJVNJD2873T4G typically comes in a standard package that includes three pins: the collector, the gate, and the emitter. These three terminals are used to control the IGBT's operation: the gate controls the flow of current between the collector and the emitter.
Functionally, the NJVNJD2873T4G is designed to handle high voltage and current, making it suitable for applications such as motor drives, inverters, and power supply circuits. It is known for its efficiency in switching and energy handling, contributing to reduced power loss and improved performance in electronic systems.
For detailed specifications and data sheets, consulting the manufacturer's documentation is recommended to ensure accurate and up-to-date information.

Manufacturer

The NJVNJD2873T4G is a semiconductor component manufactured by ON Semiconductor, now known as onsemi. Onsemi is a company that specializes in the design and manufacture of semiconductor components and solutions. It provides a wide range of products including power and signal management, logic, discrete semiconductors, and custom devices for various industries such as automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power applications. The company focuses on energy-efficient innovations, aiming to reduce global energy consumption.

Application

The NJVNJD2873T4G is a MOSFET transistor, typically used in power management applications. Its primary applications include:
1. Power Supply Circuits: Used for efficient voltage regulation and switching.
2. Motor Control: Assists in controlling speed and direction in DC motors.
3. LED Drivers: Helps in driving high-power LEDs with precision.
4. Battery Management: Facilitates charging and discharging cycles in battery-operated devices.
5. DC-DC Converters: Used for stepping down/up voltage levels in electronic circuits.
6. Inverters: Plays a role in converting DC to AC in various invertor applications.
These applications leverage the MOSFET's efficiency in switching and power handling capabilities.

Package

The NJVNJD2873T4G is a MOSFET transistor package commonly used in electronic circuits. It is housed in a surface-mount package, typically a DPAK (TO-252), which is designed for efficient thermal management and compact applications.

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