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NSS1C201MZ4T1G
+StücklisteTRANS NPN 100V 2A SOT223
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HerstellerOnsemi
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Herstellerteil #NSS1C201MZ4T1G
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Paket TO-261-4
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Auf Lager3258
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 2 A |
| Voltage - Collector Emitter Breakdown(Max) | 100 V |
| Vce Saturation(Max) @ Ib Ic | 180mV @ 200mA, 2A |
| Current - Collector Cutoff(Max) | 100nA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 120 @ 500mA, 2V |
| Power - Max | 800 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Übersicht
Description
The NSS1C201MZ4T1G is a small-signal NPN bipolar junction transistor (BJT) used primarily for switching and amplification purposes in electronic circuits. Manufactured by ON Semiconductor, it is designed for general-purpose applications. The transistor is known for its low power consumption and high-speed operation.
Key specifications include a maximum collector current (Ic) of 100 mA and a maximum collector-emitter voltage (Vce) of 50 V. The device is housed in a compact SOT-23 package, making it suitable for surface-mount technology (SMT) applications where space is limited. It features a high current gain (beta) typically ranging from 100 to 300, which ensures efficient amplification.
The NSS1C201MZ4T1G is often used in signal processing tasks, such as switching in digital logic circuits or amplifying weak audio signals. Its reliability and performance make it a popular choice in consumer electronics, automotive systems, and telecommunications. When integrating this transistor into a design, proper thermal management and biasing are essential to maintain stability and prevent damage.
Key specifications include a maximum collector current (Ic) of 100 mA and a maximum collector-emitter voltage (Vce) of 50 V. The device is housed in a compact SOT-23 package, making it suitable for surface-mount technology (SMT) applications where space is limited. It features a high current gain (beta) typically ranging from 100 to 300, which ensures efficient amplification.
The NSS1C201MZ4T1G is often used in signal processing tasks, such as switching in digital logic circuits or amplifying weak audio signals. Its reliability and performance make it a popular choice in consumer electronics, automotive systems, and telecommunications. When integrating this transistor into a design, proper thermal management and biasing are essential to maintain stability and prevent damage.
Equivalent
The NSS1C201MZ4T1G is a NPN bipolar junction transistor (BJT) from ON Semiconductor. Equivalent products could include similar NPN transistors from other manufacturers with matching specifications, such as the BC337, 2N3904 and 2N2222Always cross-reference electrical characteristics like voltage, current ratings, and package type to ensure compatibility.
Features
The NSS1C201MZ4T1G is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. Key features include:
1. Collector-Emitter Voltage (VCEO): Typically rated at 45V, which indicates the maximum voltage the transistor can handle between the collector and emitter.
2. Collector Current (IC): Maximum continuous current of around 200mA.
3. DC Current Gain (hFE): Offers a DC current gain range, ensuring efficient amplification.
4. Saturation Voltage: Low collector-emitter saturation voltage, which contributes to efficient switching.
5. Power Dissipation: Designed for moderate power applications with a power dissipation of up to a few hundred milliwatts.
6. Package Type: Available in a SOT-23 surface-mount package, making it suitable for compact circuit designs.
7. High-Speed Switching: Effective for applications requiring fast switching times.
This transistor is often used in signal processing, small motor controls, and driver circuits due to its versatility and reliability.
1. Collector-Emitter Voltage (VCEO): Typically rated at 45V, which indicates the maximum voltage the transistor can handle between the collector and emitter.
2. Collector Current (IC): Maximum continuous current of around 200mA.
3. DC Current Gain (hFE): Offers a DC current gain range, ensuring efficient amplification.
4. Saturation Voltage: Low collector-emitter saturation voltage, which contributes to efficient switching.
5. Power Dissipation: Designed for moderate power applications with a power dissipation of up to a few hundred milliwatts.
6. Package Type: Available in a SOT-23 surface-mount package, making it suitable for compact circuit designs.
7. High-Speed Switching: Effective for applications requiring fast switching times.
This transistor is often used in signal processing, small motor controls, and driver circuits due to its versatility and reliability.
Pinout
The NSS1C201MZ4T1G is a bipolar NPN transistor. It typically comes in a SOT-223 package, which usually has 3 pins and an additional tab that acts as the fourth connection for heat dissipation. The pin configuration is as follows:
1. Pin 1: Base (B)
2. Pin 2: Collector (C)
3. Pin 3: Emitter (E)
4. Tab: Collector (C)
The primary function of this transistor is to amplify current, allowing a small input current at the base to control a larger current flow between the collector and emitter. This makes it suitable for various switching and amplification applications.
1. Pin 1: Base (B)
2. Pin 2: Collector (C)
3. Pin 3: Emitter (E)
4. Tab: Collector (C)
The primary function of this transistor is to amplify current, allowing a small input current at the base to control a larger current flow between the collector and emitter. This makes it suitable for various switching and amplification applications.
Manufacturer
The NSS1C201MZ4T1G is manufactured by ON Semiconductor. ON Semiconductor, now known as onsemi, is a leading semiconductor manufacturer that specializes in a wide range of products, including power and signal management, logic, discrete, and custom devices. The company serves various industries such as automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. Onsemi is known for its focus on energy-efficient innovations, helping customers solve complex design challenges and reduce their overall energy consumption.
Application
The NSS1C201MZ4T1G is a N-channel MOSFET used in various applications due to its efficient performance characteristics. Key application areas include:
1. Power Management: Utilized in power supplies and voltage regulation for improved efficiency.
2. Motor Control: Controls motors in industrial and consumer electronics by efficiently switching currents.
3. Switching Applications: Employed in switching converters and other circuits requiring fast and efficient switching.
4. Amplification: Used in circuits requiring signal amplification with low power loss.
5. Load Switching: Suitable for on/off control in various devices and systems.
Its compact size and reliability make it versatile for integration in electronic circuits where space and performance are crucial.
1. Power Management: Utilized in power supplies and voltage regulation for improved efficiency.
2. Motor Control: Controls motors in industrial and consumer electronics by efficiently switching currents.
3. Switching Applications: Employed in switching converters and other circuits requiring fast and efficient switching.
4. Amplification: Used in circuits requiring signal amplification with low power loss.
5. Load Switching: Suitable for on/off control in various devices and systems.
Its compact size and reliability make it versatile for integration in electronic circuits where space and performance are crucial.
Package
The NSS1C201MZ4T1G is a SOT-223 package type. It's commonly used for surface-mount applications in electronic circuits, providing a compact form for components like transistors and voltage regulators.
