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NTD5867NLT4G
+StücklisteMOSFET N-CH 60V 20A DPAK
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HerstellerOnsemi
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Herstellerteil #NTD5867NLT4G
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Paket TO-252-4
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Auf Lager4515
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 39mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 675 pF @ 25 V |
| Power Dissipation (Max) | 36W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Übersicht
Description
Key features of the NTD5867NLT4G include:
- N-Channel Design: It operates as an N-channel enhancement-mode MOSFET.
- Low On-Resistance: This feature minimizes power losses and improves efficiency.
- High Current Capacity: Can handle substantial current loads, making it ideal for demanding applications.
- Robust Thermal Performance: Effective in managing heat dissipation, crucial for maintaining performance and reliability.
- Versatile Use Cases: Commonly used in automotive systems, power supplies, and motor drivers among other applications.
Its robust design and efficiency make the NTD5867NLT4G a reliable choice for engineers and designers looking to optimize power efficiency in electronic circuits.
Equivalent
Features
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of around 12A, making it suitable for medium to high-power applications.
2. R_DS(on): The on-resistance (R_DS(on)) is typically low, ensuring high efficiency with minimal power loss during operation.
3. Gate-Source Voltage: The gate-source voltage (V_GS) is typically between ±20V, providing flexibility in driving the MOSFET.
4. Package Type: It usually comes in a standard DPAK package, which offers good thermal performance and is suitable for surface-mount applications.
5. Thermal Characteristics: It has excellent thermal resistance, enhancing reliability and performance under high temperatures.
6. Applications: Ideal for use in switching applications, including DC-DC converters, motor control, and load switching.
These features make the NTD5867NLT4G a versatile choice for a wide range of electronic circuits requiring efficient power management.
Pinout
1. Gate (G): This is the control pin for the MOSFET. Applying a voltage here will allow current to flow between the drain and source.
2. Drain (D): This pin is the main terminal for current input when the MOSFET is in the 'on' state. The drain is also connected to the tab.
3. Source (S): This is the output terminal for current. It completes the circuit when the MOSFET is switched on.
The tab, which is connected to the drain, is used for heat dissipation and can also be electrically connected to other components in some applications. This configuration is typical for surface-mounted power transistors used in high-speed switching and power management applications.
Manufacturer
Application
1. DC-DC Converters: Utilized for efficient voltage regulation in power supply systems.
2. Load Switches: Employed in controlling the power flow to various components in a circuit.
3. Motor Drive Circuits: Used in controlling motors in automotive and industrial applications.
4. Battery Management Systems: Integral in balancing and protecting batteries in electronic devices.
5. Telecommunications Equipment: Helps in managing power in networking and communication devices.
Its low on-resistance and high efficiency make it suitable for these applications.