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NTD6416ANLT4G
+StücklisteMOSFET N-CH 100V 19A DPAK
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HerstellerOnsemi
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Herstellerteil #NTD6416ANLT4G
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Paket TO-252-3
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Auf Lager1556
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain(Id) @ 25°C | 19A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 74mOhm @ 19A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 40 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1000 pF @ 25 V |
| Power Dissipation (Max) | 71W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DPAK |
Übersicht
Description
The NTD6416ANLT4G is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic applications. It is designed for switching and amplifying electronic signals in a variety of devices. Key features of this MOSFET include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 60V and can handle a continuous drain current (I_D) of around 14A, making it suitable for medium to high power applications.
2. R_DS(on): The on-resistance is relatively low, ensuring efficient operation with minimal power loss when the device is in the conducting state.
3. Package Type: It is often housed in a DPAK package, which provides a compact form factor suitable for surface-mount technology.
4. Applications: The NTD6416ANLT4G is commonly found in power management circuits, motor drivers, and various other applications requiring efficient power conversion and control.
This MOSFET is valued for its reliability and efficiency in industrial and consumer electronic circuits.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 60V and can handle a continuous drain current (I_D) of around 14A, making it suitable for medium to high power applications.
2. R_DS(on): The on-resistance is relatively low, ensuring efficient operation with minimal power loss when the device is in the conducting state.
3. Package Type: It is often housed in a DPAK package, which provides a compact form factor suitable for surface-mount technology.
4. Applications: The NTD6416ANLT4G is commonly found in power management circuits, motor drivers, and various other applications requiring efficient power conversion and control.
This MOSFET is valued for its reliability and efficiency in industrial and consumer electronic circuits.
Equivalent
The NTD6416ANLT4G is an N-channel MOSFET designed primarily for low-voltage applications. Equivalent products from other manufacturers may include:
1. FDD6692 from ON Semiconductor
2. IRL3103 from Vishay
3. STP36NF06 from STMicroelectronics
4. RFP30N06LE from Fairchild Semiconductor
Ensure to compare the datasheets for exact specifications like voltage, current ratings, and Rds(on) to confirm compatibility with your application.
1. FDD6692 from ON Semiconductor
2. IRL3103 from Vishay
3. STP36NF06 from STMicroelectronics
4. RFP30N06LE from Fairchild Semiconductor
Ensure to compare the datasheets for exact specifications like voltage, current ratings, and Rds(on) to confirm compatibility with your application.
Features
The NTD6416ANLT4G is an N-channel MOSFET designed for various electronic applications. Key features include:
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of approximately 9A, making it suitable for medium to high power applications.
2. R_DS(on): The on-state resistance is low, often around 0.034 ohms, which contributes to efficient power handling and reduced heat dissipation.
3. Gate Threshold Voltage: It features a gate threshold voltage (V_GS(th)) usually in the range of 2-4V, ensuring ease of drive from standard logic levels.
4. Package Type: The device is commonly available in a TO-252 package, which aids in heat dissipation while maintaining a compact form factor.
5. Temperature Range: It operates effectively within a wide temperature range, often from -55°C to 175°C, allowing for reliable performance in various environmental conditions.
These features make the NTD6416ANLT4G a versatile choice for applications like power management, DC-DC converters, and motor control.
1. Voltage and Current Ratings: It typically supports a drain-source voltage (V_DS) of up to 60V and a continuous drain current (I_D) of approximately 9A, making it suitable for medium to high power applications.
2. R_DS(on): The on-state resistance is low, often around 0.034 ohms, which contributes to efficient power handling and reduced heat dissipation.
3. Gate Threshold Voltage: It features a gate threshold voltage (V_GS(th)) usually in the range of 2-4V, ensuring ease of drive from standard logic levels.
4. Package Type: The device is commonly available in a TO-252 package, which aids in heat dissipation while maintaining a compact form factor.
5. Temperature Range: It operates effectively within a wide temperature range, often from -55°C to 175°C, allowing for reliable performance in various environmental conditions.
These features make the NTD6416ANLT4G a versatile choice for applications like power management, DC-DC converters, and motor control.
Pinout
The NTD6416ANLT4G is an N-channel MOSFET. It typically comes in a DPAK package, which has three pins plus a fourth tab used for heat dissipation. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET's on/off state by applying a voltage.
2. Drain (D): The drain is where the main current flows out of the MOSFET when it is in the "on" state. It is connected to the tab for heat dissipation.
3. Source (S): This is the pin through which current enters the MOSFET.
The tab is connected to the Drain, providing additional heat sinking capability. This configuration allows the MOSFET to handle significant power levels by efficiently dissipating heat. The main function of the NTD6416ANLT4G is to act as a switch or amplifier in various electronic circuits, commonly used in power management applications.
1. Gate (G): This pin is used to control the MOSFET's on/off state by applying a voltage.
2. Drain (D): The drain is where the main current flows out of the MOSFET when it is in the "on" state. It is connected to the tab for heat dissipation.
3. Source (S): This is the pin through which current enters the MOSFET.
The tab is connected to the Drain, providing additional heat sinking capability. This configuration allows the MOSFET to handle significant power levels by efficiently dissipating heat. The main function of the NTD6416ANLT4G is to act as a switch or amplifier in various electronic circuits, commonly used in power management applications.
Manufacturer
The manufacturer of the NTD6416ANLT4G is ON Semiconductor, which is now known as onsemi. Onsemi is a global semiconductor supplier and innovator that focuses on energy-efficient electronics. The company provides a wide range of products, including discrete components, integrated circuits, and SoC (System on Chip) solutions. These products serve various applications across automotive, industrial, computing, communications, and consumer sectors. Onsemi is known for its emphasis on energy efficiency and sustainable technologies, enabling smarter and more efficient electronic systems and solutions.
Application
The NTD6416ANLT4G is a type of N-channel MOSFET commonly used in various applications due to its high-efficiency switching capabilities. Key application areas include:
1. Power Management: Used in power supply circuits and voltage regulators.
2. Motor Control: Suitable for driving small motors in consumer electronics.
3. DC-DC Converters: Employed in step-down and step-up converters for efficient power conversion.
4. Load Switching: Used in battery-operated devices for load switching to enhance battery life.
5. LED Drivers: Utilized in controlling LED brightness in lighting applications.
6. Audio Amplifiers: Acts as a switch to enable efficient audio signal amplification.
Its compact size and low on-resistance make it ideal for portable and handheld device applications.
1. Power Management: Used in power supply circuits and voltage regulators.
2. Motor Control: Suitable for driving small motors in consumer electronics.
3. DC-DC Converters: Employed in step-down and step-up converters for efficient power conversion.
4. Load Switching: Used in battery-operated devices for load switching to enhance battery life.
5. LED Drivers: Utilized in controlling LED brightness in lighting applications.
6. Audio Amplifiers: Acts as a switch to enable efficient audio signal amplification.
Its compact size and low on-resistance make it ideal for portable and handheld device applications.
Package
The NTD6416ANLT4G is a MOSFET device housed in a DPAK package, also known as TO-252. This package type is designed for surface mounting on a PCB and is commonly used for efficient thermal management and compact power applications.
