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NTF3055L108T1G
+StücklisteMOSFET N-CH 60V 3A SOT223
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HerstellerOnsemi
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Herstellerteil #NTF3055L108T1G
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Paket SOT-223-4
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Auf Lager1302
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 5V |
| Rds On(Max) @ Id Vgs | 120mOhm @ 1.5A, 5V |
| Vgs(th)(Max) @ Id | 2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 5 V |
| Vgs(Max) | ±15V |
| Input Capacitance(Ciss)(Max) @ Vds | 440 pF @ 25 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223 (TO-261) |
Übersicht
Description
The NTF3055L108T1G is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency and high-speed switching applications. It is commonly used in power management systems, DC-DC converters, and motor control circuits. The component features low on-resistance and high current handling capability, making it suitable for use in circuits requiring efficient power delivery and minimal energy loss. The MOSFET is housed in a compact package, facilitating its use in space-constrained designs.
Key specifications include a maximum drain-source voltage (V_DS) and continuous drain current (I_D), which define its operational limits. Additionally, it features a low gate charge, ensuring fast switching speeds and reduced gate drive power requirements. The NTF3055L108T1G is also designed to handle high-temperature environments, improving its reliability and lifespan in demanding applications. It is a product of ON Semiconductor, a company known for producing robust electronic components.
Key specifications include a maximum drain-source voltage (V_DS) and continuous drain current (I_D), which define its operational limits. Additionally, it features a low gate charge, ensuring fast switching speeds and reduced gate drive power requirements. The NTF3055L108T1G is also designed to handle high-temperature environments, improving its reliability and lifespan in demanding applications. It is a product of ON Semiconductor, a company known for producing robust electronic components.
Equivalent
The NTF3055L108T1G is a MOSFET designed for various applications. Equivalent products with similar specifications include:
1. IRFZ44N by Infineon
2. FQP30N06L by ON Semiconductor
3. RFP30N06LE by Vishay
4. STP30N06 by STMicroelectronics
These equivalents have comparable voltage and current ratings, making them suitable substitutes in most applications. Always verify the specific requirements of your application to ensure compatibility.
1. IRFZ44N by Infineon
2. FQP30N06L by ON Semiconductor
3. RFP30N06LE by Vishay
4. STP30N06 by STMicroelectronics
These equivalents have comparable voltage and current ratings, making them suitable substitutes in most applications. Always verify the specific requirements of your application to ensure compatibility.
Features
The NTF3055L108T1G is an N-channel power MOSFET commonly used in electronic applications. Key features include:
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of around 60V and can handle continuous drain current (I_D) of approximately 12A.
2. Low On-State Resistance: It offers low R_DS(on), which minimizes conduction losses, enhancing efficiency in power applications.
3. Fast Switching Speed: This MOSFET is designed for high-speed switching, suitable for applications requiring quick response times.
4. Thermal Performance: It comes in a small surface-mount package, which offers efficient heat dissipation and is ideal for space-constrained designs.
5. Protection Features: The device may include built-in protection against over-voltage and over-current conditions, depending on the application circuit design.
6. Applications: Commonly used in power management, motor drives, DC/DC converters, and load switches.
These features make the NTF3055L108T1G a versatile choice for various industrial and consumer electronics applications.
1. Voltage and Current Ratings: It typically has a drain-source voltage (V_DS) rating of around 60V and can handle continuous drain current (I_D) of approximately 12A.
2. Low On-State Resistance: It offers low R_DS(on), which minimizes conduction losses, enhancing efficiency in power applications.
3. Fast Switching Speed: This MOSFET is designed for high-speed switching, suitable for applications requiring quick response times.
4. Thermal Performance: It comes in a small surface-mount package, which offers efficient heat dissipation and is ideal for space-constrained designs.
5. Protection Features: The device may include built-in protection against over-voltage and over-current conditions, depending on the application circuit design.
6. Applications: Commonly used in power management, motor drives, DC/DC converters, and load switches.
These features make the NTF3055L108T1G a versatile choice for various industrial and consumer electronics applications.
Pinout
The NTF3055L108T1G is a N-channel MOSFET transistor used for switching and amplification applications. It typically comes in a SOT-223 package, which has three pins and a tab. The pin configuration is as follows:
1. Pin 1 (Gate): This is the control terminal that modulates the conductivity between the drain and source. A voltage applied to the gate determines whether the transistor is on or off.
2. Pin 2 (Drain): This is where the current enters the transistor when it is in the "on" state.
3. Pin 3 (Source): This is the terminal through which the current exits the transistor.
4. Tab (Drain): The tab is often connected internally to the drain and can be used for heat dissipation or extra electrical connection.
The NTF3055L108T1G is designed for low on-resistance and high-speed switching, making it suitable for power management applications. It operates efficiently in various electronic circuits, including power supplies and motor controllers.
1. Pin 1 (Gate): This is the control terminal that modulates the conductivity between the drain and source. A voltage applied to the gate determines whether the transistor is on or off.
2. Pin 2 (Drain): This is where the current enters the transistor when it is in the "on" state.
3. Pin 3 (Source): This is the terminal through which the current exits the transistor.
4. Tab (Drain): The tab is often connected internally to the drain and can be used for heat dissipation or extra electrical connection.
The NTF3055L108T1G is designed for low on-resistance and high-speed switching, making it suitable for power management applications. It operates efficiently in various electronic circuits, including power supplies and motor controllers.
Manufacturer
The NTF3055L108T1G is manufactured by ON Semiconductor, which is now known as onsemi. onsemi is an American semiconductor supplier company that designs, manufactures, and sells a wide range of semiconductor components. These components include power and signal management, logic, discrete, and custom devices for various applications, including automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power applications. onsemi focuses on providing innovative and energy-efficient solutions to improve energy usage in electronics.
Application
The NTF3055L108T1G is a N-channel MOSFET commonly used for switching and amplifier applications. Key application areas include power management, automotive systems, DC-DC converters, motor control, and load switching. Its low on-resistance and fast switching capability make it suitable for high-efficiency power conversion and distribution tasks. Additionally, it's used in consumer electronics for power regulation and in industrial systems where robust and reliable switching is required. Its surface-mount package allows for compact, space-efficient designs.
Package
The NTF3055L108T1G is a N-channel MOSFET typically packaged in a surface-mount package known as SOT-223. This package type is designed for efficient heat dissipation and is commonly used in applications requiring compact size and high performance.
