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NTJD4001NT1G
+StücklisteMOSFET 2N-CH 30V 0.25A SOT-363
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HerstellerOnsemi
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Herstellerteil #NTJD4001NT1G
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Paket SC-88
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Auf Lager7623
365 Tage Qualitätsgarantie
7*24 Stunden-Servicegarantie
90-Tage Kundendienstgarantie
Originalproduktgarantie
Spezifikationen
| Attribut | Wert |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Standard |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 250mA |
| RdsOn(Max)@IdVgs | 1.5Ohm @ 10mA, 4V |
| Vgs(th)(Max)@Id | 1.5V @ 100µA |
| GateCharge(Qg)(Max)@Vgs | 1.3nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 33pF @ 5V |
| Power-Max | 272mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-TSSOP, SC-88, SOT-363 |
Übersicht
Description
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Equivalent
Features
1. Dual N-Channel Configuration: Contains two N-channel MOSFETs in a single package, which saves space and simplifies circuit design.
2. Low On-Resistance: Offers low R_DS(on) values, leading to efficient power usage and minimal heat generation during operation.
3. Fast Switching Speeds: Supports high-speed switching, making it suitable for a variety of applications that require rapid signal processing.
4. Compact Package: Available in a small, surface-mounted package (SOT-563), which is ideal for space-constrained designs.
5. Low Gate Charge: Features a low gate charge, reducing the power required to drive the MOSFET and enhancing overall efficiency.
6. Robust Performance: Designed to handle moderate power levels, which is suitable for both low and medium power applications.
7. Wide Temperature Range: Operates over an extended temperature range, ensuring reliability in diverse environmental conditions.
These features make the NTJD4001NT1G a versatile component for various electronic applications.
Pinout
1. Pin 1 (Gate 1): Controls the first N-channel MOSFET.
2. Pin 2 (Source 1): Source terminal of the first MOSFET.
3. Pin 3 (Source 2): Source terminal of the second MOSFET.
4. Pin 4 (Gate 2): Controls the second N-channel MOSFET.
5. Pin 5 (Drain 2): Drain terminal of the second MOSFET.
6. Pin 6 (Drain 1): Drain terminal of the first MOSFET.
This dual MOSFET device is used for various switching applications and is suitable for low-voltage and high-speed environments, providing efficient operation in compact spaces.
Manufacturer
Onsemi is known for providing high-performance silicon solutions that help engineers solve their design challenges more efficiently and effectively. With a focus on energy-efficient innovations, the company aims to promote sustainability and reduce the overall environmental impact of its products. Onsemi is committed to delivering advanced technologies that drive smarter, safer, and more connected systems across multiple industries globally.