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NTR4101PT1G
+StücklisteMOSFET P-CH 20V 1.8A SOT23-3
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HerstellerOnsemi
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Herstellerteil #NTR4101PT1G
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Paket SOT-23-3
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Auf Lager7685
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Spezifikationen
| Attribut | Wert |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 1.8A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 85mOhm @ 1.6A, 4.5V |
| Vgs(th)(Max) @ Id | 1.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 8.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 675 pF @ 10 V |
| Power Dissipation (Max) | 420mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Übersicht
Description
- Low On-Resistance (RDS(on)): Typically 41 mΩ at 4.5V gate drive, minimizing power loss.
- Low Threshold Voltage (VGS(th)): ~1V, enabling use in low-power circuits (e.g., battery-operated devices).
- Compact Package: SOT-23, ideal for space-constrained designs.
- Fast Switching: Suitable for load switching, power management, and DC-DC converters.
Common applications include portable electronics, power distribution, and motor control. Its low gate charge enhances energy efficiency. Always refer to the datasheet for detailed specifications.
Features
- Voltage Rating: -40V (Drain-to-Source, VDSS)
- Current Rating: -4.1A (Continuous Drain Current, ID)
- Low On-Resistance: 85mΩ (max) at VGS = -10V
- Gate Threshold Voltage: -1V to -3V (VGS(th))
- Fast Switching: Low gate charge (Qg) for efficient performance
- Power Dissipation: 1.4W (TA = 25°C)
- Package: SOT-23 (Compact, surface-mount)
- Applications: Load switching, power management, battery protection
Ideal for low-voltage, high-efficiency circuits.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (typically tied to the higher potential).
3. Drain (D) – Connects to the load (output side).
Key specs:
- -30V drain-source voltage (VDS)
- -4.1A continuous drain current (ID)
- Low RDS(on) (e.g., ~36mΩ at VGS = -10V).
Commonly used for load switching, power management, and reverse polarity protection.
Manufacturer
ON Semiconductor specializes in energy-efficient technologies, offering a wide range of products, including power management, analog, and discrete components for automotive, industrial, and consumer markets. The company is known for its innovation in power efficiency and reliability.
The NTR4101PT1G is a P-channel MOSFET, commonly used in power switching applications. ON Semiconductor's components are widely trusted in electronics design.
Application
- Power Management: Load switching, power distribution.
- Battery Protection: Overcurrent/overvoltage protection in portable devices.
- DC-DC Converters: Efficient voltage regulation.
- Automotive Systems: Low-power control circuits.
- Consumer Electronics: Power control in smartphones, tablets, etc.
Its low on-resistance and compact SOT-23 package make it ideal for space-constrained, energy-efficient applications.
